PROBLEM TO BE SOLVED: To accurately determine abnormality while suppressing costs.SOLUTION: An abnormality determination apparatus of rotation detection means or conversion means comprises: a motor; control means for transmitting a rotation command value to the motor; rotation detection means for detecting rotation information of the motor; conversion means for outputting a converted signal obtained by converting the rotation information detected by the rotation detection means into a digital value, to the control means; and abnormality determination means for determining that at least one of the rotation detection means and the conversion means is abnormal, in a case where an absolute value of a difference between a present output signal and a signal that transmits the rotation command value of a first predetermined value or higher to the motor from the control means and is output from the conversion means before a predetermined period, is a second predetermined value or lower.SELECTED DRAWING: Figure 1 【課題】コストを抑えつつ、異常を正確に判定できること。【解決手段】回転検出手段又は変換手段の異常判定装置は、モータと、該モータに対し回転指令値を送信する制御手段と、モータの回転情報を検出する回転検出手段と、回転検出手段により検出された回転情報をデジタル値に変換し該変換した信号を、制御手段に対して出力する変換手段と、制御手段からモータに対して第１所定値以上の回転指令値が送信され、かつ、変換手段から所定周期前に出力される信号と、今回出力される信号と、の差分の絶対値が第２所定値以下である場合に、回転検出手段及び変換手段のうちの少なくとも一方が異常であると判定する異常判定手段と、を備えている。【選択図】図１

The present invention may provide a particle detector or imager which may be used for accurate recording of medical (2-D) X-ray images. The imager includes at least one detector panel. The detector panel includes a microgap detector with an array of pixel electrodes of a novel form. Each pixel electrode is insulated from a planar cathode by means of an insulating layer. Each pixel electrode is connected to an underlying contact by means of a via hole in the insulating layer. The insulating layer is preferable conformal with the electrodes. The underlying contact is connected to an electronic measuring element which preferably lies underneath the electrode and is about the same size as the electrode. The measuring element may be a storage device, a digital counter or similar. A switching transistor is connected to the measuring device. The switching transistor may be a thin film transistor. Alternatively, both measuring element and transistor may be formed in a single crystal semiconductor, e.g. a VLSI, and a complete imager formed from several detector panels in an array. The drift electrode of the microgap detector preferably includes a photocathode. The photocathode may be directly evaporated onto a phosphor.

To measure oxygen, nitrogen or hydrogen in a sample containing sulfur with high reliability.SOLUTION: A method for measuring oxygen, nitrogen or hydrogen in a solid sample includes: a process of heating the solid sample in the presence of first desulfurization agent composed of metal capable of generating sulfide, removing sulfur in the solid sample as a sulfide of the first desulfurization agent, and generating gas containing oxygen, nitrogen or hydrogen in the solid sample; a process of making the generated gas pass through a filling pipe filled with second desulfurization agent composed of metal capable of generating the sulfide, and heated at 600°C or more and 750°C or less, and removing residual sulfur contained in the gas as a sulfide of the second desulfurization agent; and a process of measuring oxygen, nitrogen or hydrogen contained in the gas which has passed through the filling tube.SELECTED DRAWING: Figure 4 【課題】硫黄を含有する試料中の酸素、窒素及び水素の定量を高信頼性をもって行うこと。【解決手段】本発明の固体試料中の酸素、窒素又は水素の定量方法は、硫化物の生成が可能な金属からなる第１の脱硫剤の共存下に固体試料を加熱して、該固体試料中の硫黄を第１の脱硫剤の硫化物として除去するとともに、該固体試料中の酸素、窒素又は水素を含むガスを発生させる工程と、発生した前記ガスを、硫化物の生成が可能な金属からなる第２の脱硫剤が充填され且つ６００℃以上７５０℃以下に加熱された充填管に通して、該ガス中に含まれる残余の硫黄を第２の脱硫剤の硫化物として除去する工程と、前記充填管を通過したガス中に含まれる酸素、窒素又は水素を定量する工程と、を含む。【選択図】図４

797,505. Automatic control systems. SIEMENS - SCHUCKERTWERKE AKT - GES. Nov. 11, 1954 [Nov. 11, 1953], No. 32748/54. Class 38 (4). [Also in Groups XXXVI and XL (c)] The output of a Hall effect device is connected to control, indicating or amplifying means and the semi-conductor body has a carrier mobility of at least 6000 cms2/volt sec. The Hall output may be applied to a valve, transistor or magnetic amplifier, a magnetic relay, or a controllable D.C. generator. Fig. 2 shows an arrangement which provides constant current through a load V. The Hall output from M is applied to a magnetic or other amplifier MV, the output of which varies inversely with the input which supplies the current through load V. This current also passes through coil EM to supply the magnetic field for Hall member M, and thus varies the Hall output so that a constant current then passes through load V and coil EM. A modification of the Fig. 2 arrangement is also described in which the load current passes through a servomotor which varies the position of a permanent magnet used to provide the magnetic field for the Hall member. Reference has been directed by the Comptroller to Specification 759,047, [Group XXXVI].

1,013,141. Automatic amplitude control. MINISTER OF AVIATION. Dec. 28, 1961 [Dec. 30, 1960], No. 44872/60. Heading G3R. [Also in Divisions H3 and H4] A stabilized microwave oscillation generator comprises a basic microwave oscillator having means for controlling its frequency of oscillation in response to a first controlling signal, a microwave output amplifier having means for controlling its output amplitude in response to a second controlling signal, the basic microwave oscillator feeding its output to the microwave amplifier, and means for producing error signals indicating frequency error and amplitude error in the output oscillation of the stabilized oscillation generator and for applying them to the basic microwave oscillator and the microwave amplifier respectively to control the output frequency and amplitude. A two cavity klystron oscillator 1 of a c.w. radar transmitter is coupled through a ferrite isolator 2 to a two-stage klystron amplifier 3A 3B feeding an output waveguide 7; and antenna 8 a fraction of the output being tapped off by a directional coupler 18, passed through a ferrite modulator 4 and phase shifter 20, and injected into the guide through directional coupler 19. A bridge type frequency discriminator 9 of the kind described in Specification 836,165 is coupled to the waveguide by directional coupler 10 and produces signals at 11 representing amplitude variation error of the waveguide output, and signal at 12 representing frequency variation error to feed Doppler frequency amplifiers 14, 16 of e.g. 1-60 kc./s. bandwidth respectively energizing a modulator 6 in the EHT supply 5 to the oscillator klystron and the ferrite modulator to stabilize the oscillator amplifier against frequency and amplitude variations at Doppler frequencies, while a D.C. amplifier 17 energized from undirectional components of signal 12 controls the stabilized EHT supply to remove mean frequency variations. The amplitude control signals may alternatively be obtained from the IF envelope detector of a superheterodyne receiver fed from the waveguide output, and the Doppler and D.C. amplifier 14, 17 may be combined. The ferrite modulator may be replaced by a semi-conductor modulator, and the discriminator bridge may be of the improved type set forth in Specification 997,282.

759,047. Semi-conductor devices. SIEMENSSCHUCKERTWERKE AKT.-GES. Nov. 12, 1953 [Nov. 12, 1952], No. 31411/53. Class 37. An instrument for measuring a magnetic field comprises a member, consisting of a semi-conducting compound of Am Bv type and having a carrier mobility of at least 6000 cms.2/volt. sec. AIII Bv type refers to a compound of one of the elements B, A1, Ga, or In with one of the elements N, P, As or Sb. The field may be measured by means of a bridge circuit adapted to measure the change in resistance of the member when subjected to the magnetic field. Alternatively the Hall effect of the member may be utilized as shown in Fig. 2, in which measurement is effected by balancing the Hall potential developed in member M against a standard potential obtained from potentiometer K. Fig. 3 shows a bridge circuit arrangement in which the combination of the resistance change and the Hall potential both developed by member M, when it is subjected to the magnetic field, are utilized to measure the magnetic field. Specification 719,873 is referred to.

1,202,280. Resistors. INTERNATIONAL BUSINESS MACHINES CORP. 7 Nov., 1967 [29 Dec., 1966], No. 50488/67. Heading H1S. [Also in Divisions C7 and G1] The maximum surface temperature attained by an article during a manufacturing process is measured by means of a resistor of which the resistance and temperature coefficient of resistance are changed permanently in dependence upon the maximum temperature to which the resistor is subjected, but independent of the length of time for which it is subjected to that temperature, which may therefore be determined by subsequent measurements of resistance or temperature coefficient of resistance of the resistor. A maximum surface temperature device 10, Fig. 3, comprises a silicon or molybdenum substrate 12, an insulating silicon dioxide layer 13, a thin film resistor 14 of a mixture of specified proportions of chromium and silicon monoxide, conductive layers 15, 16 and lead wires 18. A protective coating 17 shields the film from reactive gases. In use, the device measures the maximum surface temperature attained by a semi-conductor wafer (50), Figs. 4, 5, 6 (not shown), which is heated in an R.F. sputtering apparatus (see Heading C7A), a layer of gallium or a gallium indiumalloy being interposed between the substrate and the wafer to provide good thermal contact. Fig. 7 shows that the residual resistance of each of four similar devices, having a resistor film of 80 atomic per cent chromium and 20 atomic per cent silicon monoxide, was 63% of the initial resistance, for a maximum temperature of 500‹ C., the time taken to reach that temperature being different in each case. Fig. 8 illustrates the variation of residual resistance as a function of atomic percentage content of silicon monoxide with maximum temperature as a parameter. Fig. 9 illustrates the abrupt changes in three temperature coefficient of resistance characteristics, the temperature in brackets being the actual temperature maximum in each case, while that without refers to the point of change on the characteristic in each case. Figs. 1 and 2 (not shown) illustrate another embodiment of the device in which the substrate (11) is of silicon there being no protective coating on the resistive film.

A double-sided optical inspection system is presented which may detect and classify particles, pits and scratches on thin film disks or wafers in a single scan of the surface. In one embodiment, the invention uses a pair of orthogonally oriented laser beams, one in the radial and one in the circumferential direction on both surfaces of the wafer or thin film disk. The scattered light from radial and circumferential beams is separated via their polarization or by the use of a dichroic mirror together with two different laser wavelengths.