797,505. Automatic control systems. SIEMENS - SCHUCKERTWERKE AKT - GES. Nov. 11, 1954 [Nov. 11, 1953], No. 32748/54. Class 38 (4). [Also in Groups XXXVI and XL (c)] The output of a Hall effect device is connected to control, indicating or amplifying means and the semi-conductor body has a carrier mobility of at least 6000 cms2/volt sec. The Hall output may be applied to a valve, transistor or magnetic amplifier, a magnetic relay, or a controllable D.C. generator. Fig. 2 shows an arrangement which provides constant current through a load V. The Hall output from M is applied to a magnetic or other amplifier MV, the output of which varies inversely with the input which supplies the current through load V. This current also passes through coil EM to supply the magnetic field for Hall member M, and thus varies the Hall output so that a constant current then passes through load V and coil EM. A modification of the Fig. 2 arrangement is also described in which the load current passes through a servomotor which varies the position of a permanent magnet used to provide the magnetic field for the Hall member. Reference has been directed by the Comptroller to Specification 759,047, [Group XXXVI].

Functionalized films are provided comprising a film of ZnO or ZnO alloy disposed over a supporting substrate and a layer of organic molecules comprising terminal carboxylic acid linkage groups, wherein the organic molecules are bound to a surface of the film of ZnO or ZnO alloy via the terminal carboxylic acid linkage groups. Thin film transistors comprising the functionalized films are also provided. The functionalized films may be formed using polycrystalline ZnO and saturated fatty acids, such as stearic acid.

In a matrix-addressable apparatus comprising one or more memory devices with multidirectionally switchable memory cells (5) arranged in a passive matrix- addressable array, the memory cells comprise a memory medium in the form of a ferroelectric or electret thin-film memory material capable of being polariz ed by an applied electric field and exhibiting hysteresis, and preferably the memory material is a polymer or copolymer. A memory device in the apparatus comprises at least a first and a second electrode means (E 1;E2) such that t he electrodes (.epsilon.2) of the second electrode means (E2) are provided in recesses (3) in the electrodes (.epsilon.1) of the first electrode means (E1 ) and oriented orthogonally thereto, the recesses (3) extending only half-way through the electrodes (.epsilon.1) of the first electrode means (E1). The electrodes (.epsilon.2) of the second electrode means (E2) are provided in t he recesses (3) surrounded by memory material (4a,4b) which also contacts the crossing electrodes (.epsilon.1) of the first electrode means (E1) whereby a memory cell (5) is defined in the crossing between electrodes (.epsilon.1;.epsilon.2) of the first and second electrode means (E1;E2) respectively and formed by a memory material surrounding the electrodes (.epsilon.2) of the second means (E2) on at least three sides thereof, thus providing at least three switching directions in the memory cell (5) at different locations thereof. Two or more memory devices can be stacked in th e apparatus according to the invention, thus implementing the latter as a volumetric data storage apparatus.

FIELD: devices with matrix addressing. ^ SUBSTANCE: device with matrix addressing has one or more memory devices with memory cells, made with possible switching in several directions and built in form of passive elements massive with matrix addressing. Memory cells has memory environment in form of ferroelectric or electret thin-film material, capable of polarization under effect from applied electric field and showing hysteretic properties, while it is recommended, that memorizing material was polymer or copolymer. Memory device in device has at least first and second electrode sets. Second set electrodes are positioned in grooves, made on first set electrodes, and are directed orthogonally to first set electrodes, while grooves are deep only for half-height of first said electrodes. Second set electrodes in grooves are surrounded by memorizing material, which is also in contact with first set electrodes intersecting with it. Thus, memory cells are formed in places of intersection of first and second electrode sets, formed by memorizing material, which from at least three sides surrounds second set electrodes, and these three different areas provide at least three directions for switching the memory cell. Two or more memorizing devices can be included in a packet, to realize a device with possible volumetric data storage. ^ EFFECT: higher efficiency, simplified construction, lower costs. ^ 8 dwg, 17 dwg

PURPOSE: To manufacture or utilize a large-matrix device easily by including a sensitive zone containing a sensitive element for detecting radioactive rays or displaying information visually being connected to the conductive flow and column in each active matrix. CONSTITUTION: The active matrix of the matrix device is adhered to the upper surface of a medium 1 is made to match with the shape of the device by a thin film 2 of an adhesive. In the case of an image forming device, a ridge part formed at the sensitive zone of each active matrix is chamfered according to the incidence angle of radioactive rays S for avoiding the loss of incidence radioactive rays and the effect of the shade of one sensitive zone for another sensitive zone. Then, the matrix device is created by aligning four active matrix reactive zones 10 in parallel. The active matrixes do not overlap one another, thus avoiding the chamfering of the ridge part of the sensitive zones 10.

PURPOSE:To make it possible to judge the presence or absence of a thin film insulating layer formed on the surface of a conductive substance film with high precision in a non-destructive manner without using a large-scale analyzing device by a method wherein a constant tunnel current is detected in a state that a probe is brought into contact with the surface of a sample. CONSTITUTION:When a metal probe 1 installed to a piezoelectric element 2 in a direction Z is made to approach over the surface of a silicon substrate 8 by a moving mechanism 7 up to a distance of 1nm from the substrate surface, electron clouds 9 oozing out on the peripheries of surface atoms 1A and 8A of both of the probe and the substrate are linked to each other. In this state, when a slight voltage Vs 3 is applied between the probe and the substrate, a tunnel current It flows. This It value is detected and amplified by a tunnel current detection and amplification circuit 4, a feedback is made by a distance control circuit 5 in the direction Z for stabilizing the It value at a previously set constant value and a distance between the probe and the surface of a sample is controlled. As a result, the element 2 is expanded and contracted until the previously set constant value becomes the It value and the time dependency of the displacement component of the element 2 is recorded by an analyzing recorder 6 with the It value.

PROBLEM TO BE SOLVED: To provide a sample storing cell capable of executing surely color detection of even severely blackened oil, capable of being filled easily with oil, and capable of being used repeatedly. SOLUTION: This cell is so composed that whether oil or the like is in the deteriorated state or not is determined from lightness and a hue angle, by storing the oil or the like drawn out from an automobile in a sample cell, and by detecting light irradiated from a white light source and transmitted through the sample cell by an RGB light-receiving element, and by replacing respective electric signals detected by the RGB with a color system. In this case, thin films 30 having a prescribed thickness are printed or pasted on a smooth surface of either of two transparent members 4a, 4b equipped with the smooth plane 28 supported by an elastic material 29, and the two transparent members 4a, 4b are connected openably and closably, and a sample is retained in an aperture space 33 formed between the thin films 30 when the two transparent members 4a, 4b are closed. The periphery of the aperture space 33 is formed in the open state to the atmosphere or in a larger space than the aperture space 33 for retaining the sample.

Method for (a) controlled production or (b) modification of polymeric products using IR-ATR (infra-red attenuated total reflection) spectroscopy involves using (a) the extinction of the characteristic IR absorption bands for the monomers and resultant polymer or (b) the characteristic IR absorption bands of the educt and modified polymer; and stopping reaction by a suitable means when the required degree of conversion or modification is attained. Method for (a) controlled production or (b) modification of polymeric products using IR-ATR (infra-red attenuated total reflection) spectroscopy involves (i) using (a) the extinction of the characteristic IR absorption bands for the monomers and resultant polymer or (b) the characteristic IR absorption bands of the educt and modified polymer; and (ii) stopping reaction by a suitable means when the required degree of conversion or modification is attained. Measurements are carried out at frequent intervals with a probe immersed directly in a stirred reactor, in which the viscosity of the contents is \} 10,000, preferably 10-1000 Pas and the flow velocity is 0.01-10 m/s at the position of the probe. The degree of conversion or modification is calculated from the equation; D(t) = degree of conversion or modification; A(t) = extinction of a characteristic absorption band of the monomer or educt used at time t; A(t0) = extinction of a characteristic absorption band of the monomer or educt used at time t0 (start of reaction).