基本信息
摘要：PURPOSE:To make it possible to judge the presence or absence of a thin film insulating layer formed on the surface of a conductive substance film with high precision in a non-destructive manner without using a large-scale analyzing device by a method wherein a constant tunnel current is detected in a state that a probe is brought into contact with the surface of a sample. CONSTITUTION:When a metal probe 1 installed to a piezoelectric element 2 in a direction Z is made to approach over the surface of a silicon substrate 8 by a moving mechanism 7 up to a distance of 1nm from the substrate surface, electron clouds 9 oozing out on the peripheries of surface atoms 1A and 8A of both of the probe and the substrate are linked to each other. In this state, when a slight voltage Vs 3 is applied between the probe and the substrate, a tunnel current It flows. This It value is detected and amplified by a tunnel current detection and amplification circuit 4, a feedback is made by a distance control circuit 5 in the direction Z for stabilizing the It value at a previously set constant value and a distance between the probe and the surface of a sample is controlled. As a result, the element 2 is expanded and contracted until the previously set constant value becomes the It value and the time dependency of the displacement component of the element 2 is recorded by an analyzing recorder 6 with the It value.
摘要附图：
