PCT No. PCT/GB94/00658 Sec. 371 Date Nov. 2, 1995 Sec. 102(e) Date Nov. 2, 1995 PCT Filed Mar. 29, 1994 PCT Pub. No. WO94/23289 PCT Pub. Date Oct. 13, 1994A sensor to detect gases and vapors, particularly carbon monoxide and water vapor, at relatively low concentrations includes a substrate having a layer on a face of the substrate. The layer comprises a semi conductor metallic oxide (such as stannic oxide), a catalyst (such as platinum black), and a rheological agent (such as kieselguhr or sepiolite). The rheological agent induces porosity into the surface of the layer. The rheological agent affects the mixing and processing of the layer, and aids binding, resulting in a sensor with greater sensitivity and faster response.

Die Erfindung betrifft ein Verfahren zur Herstellung einer Thermosäule aus mehreren Thermoelementen, bei dem auf einem sich selbsttragenden, elektrisch isolierenden Substrat mehrere Leiterbahnen in Dünn- oder Dickschichttechnik aufgetragen werden, insbesondere dass in einem weiteren Schritt auf dem Substrat angeordnete Leiterbahnen mittels Resinattechnik aufgetragen werden oder Bonddrähte an die Leiterbahnen elektrisch angeschlossen werden. Manufacturing a thermopile (6) of several thermo-elements (8). Several conductor paths (2) in thin- or thick-film technique are provided on a self-supporting, electrically insulated substrate (1). Independent claims are included for: (a) a thermopile blank with at least one thin- or thick-film coating on an electrically insulating substrate. (b) a thermopile chip comprising a number of thermoelements.

A single-chip high-strength magnetic field X-axis linear magnetoresistance sensor having a calibration coil (70, 80, 81) and/or a reset coil (82, 83), the sensor comprising a high-strength magnetic field single-chip reference bridge-type X-axis magnetoresistance sensor, and the calibration coil (70, 80, 81) and/or the reset coil (82, 83), the calibration coil (70, 80, 81) being a planar coil, the reset coil (82, 83) being a planar or three-dimensional coil, the planar calibration coil (70, 80, 81) and the planar reset coil (82) being located above a substrate (1) and below magnetoresistance sensing units (4, 41, 5, 51), between the magnetoresistance sensing units (4, 41, 5, 51) and soft magnetic flux guides, above the soft magnetic flux guides, or at gaps, the three-dimensional reset coil (83) being wound around the soft magnetic flux guides and the magnetoresistance sensing units (4, 41, 5, 51), the calibration coil (70, 80, 81) and the reset coil (82, 83) respectively generating a calibration magnetic field and a uniform reset magnetic field at the magnetoresistance sensing units (4, 41, 5, 51), the calibration magnetic field being parallel to the direction of a pinned layer, the uniform reset magnetic field being in the direction of a free layer. Calibration and magnetic state resetting of the single-chip X-axis linear magnetoresistance sensor may be implemented by controlling the current of the calibration coil (70, 80, 81) and the reset coil (82, 83). La présente invention concerne un capteur de magnétorésistance linéaire sur l'axe des X à champ magnétique de haute résistance sur puce unique ayant une bobine d'étalonnage (70, 80, 81) et/ou une bobine de réinitialisation (82, 83), le capteur comportant un capteur de magnétorésistance sur l'axe des X de type pont de référence sur puce unique à champ magnétique de haute résistance, et la bobine d'étalonnage (70, 80, 81) et/ou la bobine de réinitialisation (82, 83), la bobine d'étalonnage (70, 80, 81) étant une bobine plane, la bobine de réinitialisation (82, 83) étant une bobine plane ou en trois dimensions, la bobine d'étalonnage plane (70, 80, 81) et la bobine de réinitialisation plane (82) étant localisées au-dessus d'un substrat (1) et en-dessous d'unités de détection de magnétorésistance (4, 41, 5, 51), entre les unités de détection de magnétorésistance (4, 41, 5, 51) et les guides des flux magnétiques temporaires, au-dessus des guides des flux magnétiques temporaires, ou au niveau des espaces, la bobine de réinitialisation en trois dimensions (83) étant enroulée autour des guides des flux magnétiques temporaires, les unités de détection de magnétorésistance (4, 41, 5, 51), la bobine d'étalonnage (70, 80, 81) et la bobine de réinitialisation (82, 83) générant respectivement un champ magnétique d'étalonnage et un champ magnétique uniforme de réinitialisation au niveau des unités de détection de magnétorésistance (4, 41, 5, 51), le champ magnétique d'étalonnage étant parallèle au sens d'une couche ancrée, le champ magnétique uniforme de réinitialisation se trouvant dans le sens d'une couche libre. L'étalonnage et le paramétrage de l'état magnétique du capteur de magnétorésistance linéaire sur l'axe des X sur puce unique peuvent être mis en œuvre en régulant le courant de la bobine d'étalonnage (70, 80, 81) et de la bobine de réinitialisation (82, 83). 一种单芯片具有校准线圈（70，80，81）和/或重置线圈（82，83）的高强度磁场X轴线性磁电阻传感器，包括高强度磁场单芯片参考桥式X轴磁电阻传感器及校准线圈（70，80，81）和/或重置线圈（82，83），所述校准线圈（70，80，81）为平面线圈，所述重置线圈（82，83）为平面或三维线圈，所述平面校准线圈（70，80，81）和平面重置线圈（82）可以位于衬底（1）之上磁电阻传感单元（4，41，5，51）之下、磁电阻传感单元（4，41，5，51）和软磁通量引导器之间、软磁通量引导器之上或间隙处，所述三维重置线圈（83）缠绕软磁通量引导器和磁电阻传感单元（4，41，5，51），所述校准线圈（70，80，81）和重置线圈（82，83）分别在磁电阻传感单元（4，41，5，51）处产生平行于钉扎层方向的校准磁场和自由层方向的均匀重置磁场。通过控制校准线圈（70，80，81）和重置线圈（82，83）电流可实现单芯片X轴线性磁电阻传感器校准及磁状态重置。

The present invention relates to a high-sensitive genetic mutation detection method based on a DNA-nanoparticle composite by an Au or Si substrate using Kelvin probe force microscopy (KPFM), more specifically, to a method which limits the kind of nanoparticles and substrates to optimize the surface potential measurement using the KPFM to detect the mutation of genes, and identifies the mutation of genes by fixing probe DNA to nanoparticles, spreading a compound hybridized with target DNA on an Au or Si substrate, and using the surface potential measured by the KPFM. 본 발명은 켈빈 푸르브 현미경(Kelvin probe force microscope, KPFM)을 이용한 금 또는 실리콘 기판에 의한 DNA-나노입자 복합체 기반의 고감도 유전자 변이 검지방법에 관한 것으로서, 유전자 변이 검지를 위해 켈빈 프루브 현미경을 이용한 표면 전위 측정의 최적화를 위하여 나노입자와 기판의 종류를 한정한 것으로 탐침 DNA를 금(Au) 나노입자에 고정화 시킨 후 표적 DNA와 혼성화(hybridization)시킨 합성물을 금(Au) 또는 실리콘(Si) 기판 위에 뿌리고 켈빈 프루브 현미경으로 측정된 표면 전위face potential)로 유전자의 변이 여부를 1개의 염기 변이 수준에서 식별하는 방법에 관한 것이다.

PURPOSE:To measure the optical constant of a thin film with high accuracy by calculating the optical constant of a medium formed by bringing a prism integrated with a photodetector into tight contact with a medium and using the medium formed by feeding back the measured value to a process for forming the medium to execute control. CONSTITUTION:The ray propagating in an optical wave guide 2 attains a discrete value with the incident angle of a light beam. The effective refractive index of the medium is, therefore, determined by continuously measuring the incident angle of the light beam and the intensity of the light reflected on the base of the prism 3 by the photodetector 8 integrated by the prism 3 and a holder 9. The optical constant is measured as the monitor of the process for forming various kinds of thin films and is fed back to film forming conditions. The non-destructive, easy and high-accurate measurement of the refractive index distribution of the thin film is executed in this way.

Disclosed are a measurement method and a measurement apparatus both of which can measure the content of water or an organic acid in a polar organic solvent with high accuracy even when water or the organic acid is contained in the polar organic solvent at a low content. The content of water or an organic acid in a polar organic solvent can be measured by using, as a work electrode, an ISFET electrode in which a thin film comprising an oxide or nitride of a metal or metalloid element belonging to Groups 3 to 15 is formed on a gate.

1,224,517. Semi-conductor converter. SIEMENS A.G. 4 Nov., 1968 [3 Nov., 1967], No. 52237/68. Addition to 1,189,410. Heading H3T. [Also in Division G1] A D.C. to D.C. converter (amplifier) using a magneto-resistive element 8, 9 as in the parent Specification, is improved either by connecting a high conductivity shunt 1 across the input winding 4 and a temperature independent resistor 18 across the output winding 6, or by arranging that the input winding 4 and feedback winding 6 have equal temperature coefficients of resistivity, equal power losses and heat dissipation, and are maintained at equal temperatures, the output in either case being taken from the feedback winding circuit. The output may be taken across the temperature independent resistor 18. The windings 4, 6 are wound to produce good thermal contact between them. The time constant of the input winding is preferably made equal to that of a shunt 1, 20, connected across it for current driven operation by selection of the inductance 20 of the shunt and/or by light coupling between the input winding 4 and the feedback winding 6.

Methodology of characterizing pore size distribution in a porous thin film having a surface, or in a surface region of a porous semi-infinite bulk substrate having a surface, involving applying a mathematical model of a sample based on effective medium approaches, such as the Bruggeman effective medium approach.