PROBLEM TO BE SOLVED: To grasp each phenomenon by providing a phenomenon detection part to detect the physical phenomenon and/or chemical phenomenon to fetch the electric signal of a plurality of physical phenomena and/or chemical phenomena on one side of a semi-conductor substrate in an approximately simultaneous manner. SOLUTION: A phenomenon detection device body 1 is installed in the solution, and a reference electrode 16 is immersed in the solution to determine its electric potential. A silicon substrate 2 is grounded, and a depletion layer 23 dependent on the voltage to be applied to the electrode 16 and the pH concentration of the solution is expanded below a sensing part 7 of the substrate 2. When the light is made incident on an upper surface of the silicon substrate 2 and the light enters the depletion layer 23, a pair of electron and hole are generated, the hole is discharged out of the substrate 2 while the electron is accumulated in the depletion layer 23. Before the electrons accumulated in the depletion layer 23 flows into a diffusion area 4, the positive voltage is applied to a set gate 9, and fixed to the initial electric potential, and the positive voltage is applied to a read electrode 8 to change the electric potential of the area 4, and the intensity of the light can be detected by reading the electric potential by a source follower circuit 10.

1,236,385. Semi-conductor strain gauges. PLESSEY CO. Ltd. 13 Sept., 1968 [14 Sept., 1967], No.42027/67. Heading H1K. A semi-conductor substrate providing the sensitive element of a strain gauge also has as an integral part thereof an integrated circuit for amplifying the output from the element or for indicating whether the strain on the element is above or below a predetermined level. In the former case the circuit comprises an amplifier using MOS or bipolar transistors and in the latter case it comprises a Schmitt trigger circuit. The substrate may be of Si and may be selfsupporting or mounted on a fibreglass support. The sensitive element may comprise the entire substrate or may consist of a diffused resistor region therein.

1,037,616. Semi-conductor devices. SIEMENS & HALSKE A.G. April 15, 1964 [April 22, 1963], No. 15533/64. Heading H1K. [Also in Divisions G1 and H3] In order to derive signals corresponding to pressure fluctuations an element is used which radiates energy the frequency of which is dependent on the pressure applied to the element. It is preferred to use an AIII/BV semiconductor diode as the element, a galliumarsenide diode giving radiation with a wavelength of the order of 8600A being suitable. The junction between an N-type zone 2 and a P-type zone 3 is forward biased by electrodes (not shown) and the P-side surface 5 and N-side surface 6, which are parallel, together with the end faces, form the reflecting surfaces of a resonator. Emitted coherent radiation leaves through one of the end faces. Applied pressure, indicated by the arrows 7 and 8, alters the frequency radiated. To derive an electrical output signal that is a function of the radiation frequency the radiation may be directed through an optical filter converting the frequency modulation into an amplitude modulation and thence to a photo-resistor or photo-diode. The pressure sensitive element may be close to, or spaced from, the detector. In the latter case a parabolic reflector may be used at one or both ends of the system.

PURPOSE: A method for measuring thickness or a surface shape is provided to reduce the time for determining the thickness of the thin film layer by comparing simulation interferential signals corresponding to expected thickness with real interferential signals. CONSTITUTION: Simulation interferential signals are prepared on each thickness by simulation of interference signals on a sample thin film layer. A white light is emitted on the thin film layer. A real interferential signal is obtained(S120). Plural expected thicknesses are prepared from the real interferential signals(S139). The real interferential signal is compared with the simulation interferential signal(S140). The thickness of the simulation interferential signals which are in accord with the real interferential signals is determined as the thickness of the thin film layer(S150).

In an apparatus for the measurement of electrical power, including a multiplier which receives on an input thereof an electrical signal proportional to the voltage component of the electrical power, and which is subjected to an external magnetic field proportional to the current component of the electrical power, an auxiliary magnetic field is applied to the multiplier. The multiplier is a Wheatstone bridge including four ferromagnetic and magnetoresistive thin films, and the magnetic fields have a direction along the direction of the hard magnetic axes of each of the thin films. The thin films are so positioned that the magnetization of two electrically oppositely disposed thin films resulting from the application of the external magnetic field thereto is rotated in a direction opposite to that of the correspondingly resulting magnetization of the remaining thin films, following application of the auxiliary magnetic field to the films.

869,710. Semi-conductor devices. UNICAM INSTRUMENTS Ltd. Jan. 19, 1960 [Jan. 27, 1959], No. 2978/59. Class 37. A radiation detector has a first electricallyconducting radiationabsorbing film spaced by an insulating sheet from a second electrically-conducting film forming part of a thermocouple or bolometer. Fig. 1 shows a thermocouple which consists of a gold film 4 in contact with welded joints 6, 7 of thermoelectric material and supported by a thin insulating sheet 2. On the other side of the insulating sheet is a radiation-absorbing film of aluminium, gold, nickel, bismuth, selenium or tellurium. The separation of the absorbing film from the thermocouple proper enables the film to have a surface roughness appropriate to the wavelength of the radiation to be absorbed without its thickness, which necessarily becomes large in the case of long wavelengths, affecting the thermal capacity of the thermocouple. Fig. 3 shows a bolometer in which the radiationabsorbing element is a film 13 of gold or nickel evaporated on to a collodion or Formvar (Registered Trade Mark) support. The resistive film 14 on the other side of the insulating support is connected to wire 16 by electrodes 15 formed by metal deposits.

1,199,254. Thermocouples. UNITED KING- DOM ATOMIC ENERGY AUTHORITY. 25 Aug., 1967 [12 Sept., 1966], No. 40729/66. Heading H1K [Also in Division B3] The connections between adjacent elements of a thermoelectric module consisting of an array of bismuth telluride based semi-conductor bodies are made by an alloying technique in which gold or silver members are applied to the ends of a pair of such bodies under pressure at a temperature below the melting point of either the metal or the semi-conductor. The pairs of a complete module may be inter-oonnected sequentially or simultaneously, preferably by use of a heated presser foot, Fig. 2 (not shown). Preferred materials for the semi-conductor are Bi 2 Te 3 , Bi 2 Te 3 with Bi 2 Se 3 , or Bi 2 Te 3 with Sb 2 Te 3 . In forming a module of which the elements are encased in insulant, the insulant may be undercut around the edges of the semi-conductor body ends to be contacted so that molten insulant does not contaminate the alloy bond.