A vegetable or fruit sugar content measuring instrument comprises: a measuring electrode unit (10), comprising two measuring electrodes (11) capable of being inserted into a vegetable or fruit to be tested, wherein one end of one of the two measuring electrodes (11) is connected to one end of the other one of the two measuring electrodes (11); a resistor measuring circuit (20), connected to the measuring electrode unit (10), and configured to measure a resistor Rx between the two measuring electrodes (11); and a processor (30), connected to the resistor measuring circuit (20), and configured to determine, according to the resistor Rx between the two measuring electrodes (11), sugar content of the vegetable or fruit to be tested, and generate information indicative of the sugar content. L'invention concerne un instrument de mesure de teneur en sucre de légume ou fruit, qui comprend : une unité d'électrode de mesure (10), comprenant deux électrodes de mesure (11) pouvant être insérées dans un légume ou fruit à tester, une première extrémité de l'une des deux électrodes de mesure (11) étant reliée à une première extrémité de l'autre des deux électrodes de mesure (11) ; un circuit de mesure de résistance (20), relié à l'unité d'électrode de mesure (10) et configuré pour mesurer une résistance Rx entre les deux électrodes de mesure (11) ; et un processeur (30), relié au circuit de mesure de résistance (20) et configuré pour déterminer, en fonction de la résistance Rx entre les deux électrodes de mesure (11), la teneur en sucre du légume ou fruit à tester, et générer des informations indiquant la teneur en sucre. 一种果蔬含糖量检测器，包括：测量电极单元（10），具有能够插入待测果蔬的两测量电极（11），所述两测量电极（11）中一个的一端与另一个的一端相连；电阻检测电路（20），与所述测量电极单元（10）连接，用于检测两测量电极（11）之间的电阻Rx；以及处理器（30），与所述电阻检测电路（20）连接，用于根据所述两测量电极（11）之间的电阻Rx，确定所述待测果蔬的含糖量，并生成含糖量提示信息。

1,007,031. Semi-conductor devices. HONEYWELL Inc. March 30, 1962 [April 3, 1961], No. 12394/62. Drawings to Specification. Heading H1K. An element for a semi-conductor strain gauge comprises a crystal of high resistivity semi-conductor having a surface layer thereon highly doped with an N or P-type impurity substance, the surface layer thus having a comparatively low resistivity and having ohmic electrodes attached thereto at points remote from one another. Silicon, germanium, and other semi-conductors such as the intermetallic compounds may be used. Suitable doping agents include phosphorus, arsenic, antimony, aluminium, gallium, indium or boron. The surface layer may be provided by vapour diffusion techniques or, less desirably, by the direct alloying of electroplated or vacuum deposited films. The production of the particular embodiment starts with a silicon filament having a resistivity greater than 10 ohm. cm. and which is cut so as to have the (111) axis along the filament and so as to have a substantially square cross-section. After polishing the surface with a chemical etch, such as 1: 1 :1 H 2 O/HF/HNO 3 containing 1% by weight of silver nitrate, boron is diffused into the surface using known inert carrier gas techniques. To complete the element electrical contacts are made to the surface layer using an electroless nickel bath.

The present application describes an electronically powered postage stamp or mailing label and including a radio frequency identification (RFID) device and system mounted between the opposing and facing major surfaces thereof. The RFID device and system includes an integrated circuit transceiver chip which is connected to and powered by a thin flat battery cell and is operated with a thin film RF antenna, all of which are mounted in side-by-side relationship on a thin base or support layer. These thin flat components are mounted in an essentially two dimensional planar configuration well suited for incorporation into the planar structure of a postage stamp or a mailing label. In addition, the RFID transceiver chip may be replaced with an electro-optically operated IC chip using, for example, LEDs or laser diodes for the propagation of light signals to an interrogator.

The present application describes an electronically powered postage stamp or mailing label and including a radio frequency identification (RFID) device and system mounted between the opposing and facing major surfaces thereof. The RFID device and system includes an integrated circuit transceiver chip which is connected to and powered by a thin flat battery cell and is operated with a thin film RF antenna, all of which are mounted in side-by-side relationship on a thin base or support layer. These thin flat components are mounted in an essentially two dimensional planar configuration well suited for incorporation into the planar structure of a postage stamp or a mailing label. In addition, the RFID transceiver chip may be replaced with an electro-optically operated IC chip using, for example, LEDs or laser diodes for the propagation of light signals to an interrogator.

Disclosed is a sensor comprising an insulating substrate, a plurality of electrodes coated on the insulating substrate and formed of a thin film conductor of a metallo-organic compound obtained by a pyrolysis, and a layer formed across the electrodes. The layer formed across the electodes has an electrical property changeable in accordance with an atmosphere. The sensor reduces the affection due to the existence of the step portion, restrains the structural deficiency at the step portion and improves the stability of the change with age. By the metallo-organic compound, the thin film layer can be formed by a pyrolysis at relatively low temperatures, and the electrodes can be formed in various structures and by various producing processes.

PURPOSE:To obtain high insulation property without spoiling heat conductivity and to take an accurate measurement even when the body to be measured is energized by coating the tip part of a contactor with a thin film of diamond. CONSTITUTION:The contactor 1 consists of a protective pipe 4 which projects to a probe 3 and a sensor 5 such as a thermocouple stored in the pipe. Then the diamond thin-film coating layer 2 is formed at the tip part of the sensor 5 which faces the tip of the protective pipe 4, the outer peripheral surface nearby it, and the opening end of the protective pipe 4. When the tip of the sensor 5 projects from the pipe 4, the coating layer 2 is formed only at the tip. The coating layer 2 is formed by a plasma CVD method, etc., and when the voltage of the body to be measured is 200V, thickness of about 10mum is enough. This thickness is made preferably as thin as possible so as to reduce the difference from the part to be measured. The inherent resistance of the diamond thin film 2 is 10<16>OMEGAcm, so the electric insulation is sufficiently high and the heat conductivity is about 5 times as large as that of copper and sufficiently large.

1346612 Detecting formation of thin films ANALYTICAL INSTRUMENTS Ltd 30 March 1972 [3 April 1971] 8624/71 Heading G1N The presence of a film or layer on a radioactive source is detected by the resulting drop in ionisation current in an atmosphere surrounding the source. A dew point meter is shown, and includes a radioactive source 2, e.g. tritium or nickel 63, and a collector electrode 1, the radioactive source being cooled until a drop in ionisation current collected at electrode 1 is indicated on an indicator 6. The temperature is then noted on a device 8. In Fig.2 (not shown), the output of the amplifier 5 is used to energise a heater to thereby control the rate of cooling of the source 2.

In a sensor (12) for determining pressure or force a thick-film resistor (11) is pressed onto a carrier (10). When the thick-film resistor (11) is still in the soft state, a force-introducing part (13) is placed onto the thick-film resistor, and the component thus produced is hardened. As a result, a sensor (12) having a virtually uniform load distribution over the entire thick-film resistor is produced, so that its pick-up curve is already linear in the initial range without prestressing.