基本信息
摘要：1,007,031. Semi-conductor devices. HONEYWELL Inc. March 30, 1962 [April 3, 1961], No. 12394/62. Drawings to Specification. Heading H1K. An element for a semi-conductor strain gauge comprises a crystal of high resistivity semi-conductor having a surface layer thereon highly doped with an N or P-type impurity substance, the surface layer thus having a comparatively low resistivity and having ohmic electrodes attached thereto at points remote from one another. Silicon, germanium, and other semi-conductors such as the intermetallic compounds may be used. Suitable doping agents include phosphorus, arsenic, antimony, aluminium, gallium, indium or boron. The surface layer may be provided by vapour diffusion techniques or, less desirably, by the direct alloying of electroplated or vacuum deposited films. The production of the particular embodiment starts with a silicon filament having a resistivity greater than 10 ohm. cm. and which is cut so as to have the (111) axis along the filament and so as to have a substantially square cross-section. After polishing the surface with a chemical etch, such as 1: 1 :1 H 2 O/HF/HNO 3 containing 1% by weight of silver nitrate, boron is diffused into the surface using known inert carrier gas techniques. To complete the element electrical contacts are made to the surface layer using an electroless nickel bath.
摘要附图：
