1,079,153. Transistor amplifier circuits. OSTERREICHISCHE STUDIENGESELISCHAFT FœE ATOMENERGIE G.m.b.H. Nov. 11, 1964 [Nov. 13, 1963], No. 46032/64. Heading H3T. [Also in Divisions G1 and H1] A transistor pulse amplifier, designed to have a low noise level, receives pulses at input 45 from a semi-conductor detector. Triode 46 and transistor 47 form a cascade input stage and transistors 48, 49 an inverting stage, a polarity switch 50 providing positive output pulses with positive or negative input pulses from the detector. Negative feedback is provided from the inverting stage to the input stage through capacitor 51. A differentiating network 52-54 is associated with switch 50 which is followed by a transistor amplifier with negative feedback at 60, 61. The circuit has provision for testing.

The array has at least four sensor elements (1-4). The reference electrode (4) is implemented in thick film technology on e.g. a ceramic substrate. It is connected by through-contacts (6) to contact pads (5) on the back. Substrate thickness is 250 mu m at most, and the area is 7.5 mm x 7.5 mm. Internal leads of electrodes applied to the planar substrate have selective membranes made from metal oxides or sparingly-soluble salts and are metal-structured; they are completely membrane-covered. Individual sensor elements, e.g. the reference electrode (4), are formed in duplicate on the planar substrate.

The array has at least four sensor elements (1-4). The reference electrode (4) is implemented in thick film technology on e.g. a ceramic substrate. It is connected by through-contacts (6) to contact pads (5) on the back. Substrate thickness is 250 mu m at most, and the area is 7.5 mm x 7.5 mm. Internal leads of electrodes applied to the planar substrate have selective membranes made from metal oxides or sparingly-soluble salts and are metal-structured; they are completely membrane-covered. Individual sensor elements, e.g. the reference electrode (4), are formed in duplicate on the planar substrate.

The invention relates to the use of nanoparticles of at least one oxide of at least one transition metal doped with a rare earth element, particularly YxVO4Eu1-x nanoparticles obtained through a sol-gel process, as a sensitive material in a chemical sensor for detecting peroxide-compound vapors. The material is used in a liquid process, in a spray of the initial sol, or in a solid thin film after being deposited on a substrate. The inorganic, fluorescent character of the nanoparticles makes it possible to obtain a sensitive material for an optical sensor that has good performance stability over time. The intended uses are the detection of explosives or explosive precursors, particularly peroxides, the control or monitoring of atmospheric pollution and ambient-air quality, and the monitoring of industrial sites.

A maximum counter for household three phase alternating current supplies consists of a Ferraris circuit and an electronic maximum circuit with an impulse detector, an indicator and a power supply. The combination of Ferraris and maximum counters is fitted into the standard housing hitherto fully occupied by known Ferraris circuits and without additional cost. The electronic maximum counter circuit is in the form of thick film circuits on ceramic substrate or of a printed reduced assembly cost. The impulse detector is mounted in the thick film substrate or printed circuit board and is automatically correctly positioned by suitable guides.

A method of using an organic thin film transistor (OTFT) gas sensor to measure an ester, e.g. butyl acetate, in a gas environment. The response of the OTFT gas sensor to the environment is used to determine the presence and/or the concentration of the ester in the environment. The OTFT gas sensor has source and drain electrodes (107, 109) in electrical contact with an organic semiconductor layer (111), a gate electrode (103), and a gate dielectric (105) between the organic semiconductor layer and the gate electrode. A monolayer (113) containing a protic group, e.g. an amino group, is bound to surfaces of the source and drain electrodes. The OTFT gas sensor allows for ester in the environment to interact with the protic group, which causes an output/change in output from the OTFT gas sensor. Measurement of the ester can be used to determine ripeness of fruit. L'invention concerne un capteur de gaz à transistor organique en couches minces pour mesurer un ester, par exemple de l'acétate de butyle, dans un environnement gazeux. La réponse du capteur de gaz à transistor organique en couches minces à l'environnement est utilisée pour déterminer la présence et/ou la concentration de l'ester dans l'environnement. Le capteur de gaz à transistor organique en couches minces comprend des électrodes de source et de drain (107, 109) en contact électrique avec une couche semi-conductrice organique (111), une électrode grille (103), et un diélectrique grille (105) entre la couche semi-conductrice organique et l'électrode grille. Une monocouche (113) contenant un groupe protique, par exemple un groupement amine, est liée à des surfaces des électrodes de source et de drain. Le capteur de gaz à transistor organique en couches minces permet à un ester dans l'environnement d'interagir avec le groupe protique, ce qui provoque une sortie/variation dans la sortie du capteur de gaz à transistor organique en couches minces. La mesure de l'ester peut être utilisée pour déterminer la maturité de fruits.

The housing (10) contains a hollow cylindrical section (14) and an end piece (16). A hollow body (42) with axial grooves on its outer surface is free to rotate about its longitudinal axis supported on annular air bearings (26, 28). Gas through pipe (36) supplies the air bearings rotates the hollow body at speeds greater than 200.000 r.p.m. and provides suction for the test sample which forms a thin film on the inside of the hollow body before flowing to the exit where it is atomized. Alternately gas turbine drive may be used as well as ball bearings.

The invention relates to methods of forming high frequency receivers, transmitters and transceivers from Low Temperature Co -fired Ceramic (LTCC) materials. Two or more layers of a low k thick film dielectric tape in contact with each other and two or more layers of a high k thick film dielectric tape in contact with each other form a low k high k LTCC structure with improved properties and the ability to support economical mass production techniques for high frequency transceivers. The invention also relates to the LTCC receiving, transmitting and transceiving structures and the devices made from such structures. L'invention concerne des procédés de formation de récepteurs, émetteurs et émetteurs-récepteurs à haute fréquence à partir de matériaux en Céramique cocuite à basse température (Low Temperature Co-fired Ceramic, LTCC). Au moins deux couches d'un ruban diélectrique en film épais à faible k en contact l'une avec l'autre et au moins deux couches d'un ruban diélectrique en film épais à k élevé en contact l'une avec l'autre forment une structure LTCC à k faible / élevé présentant des propriétés améliorées et susceptibles de se prêter à des techniques de production économique en grande série d'émetteurs-récepteurs à haute fréquence. L'invention concerne également des structures LTCC réceptrices, émettrices et émettrices-réceptrices ainsi que des dispositifs constitués de telles structures.