817,553. Magnetic tests. SIEMENSSCHUCKERTWERKE A.G. May 7, 1956 [May 6, 1955], No. 14179/56. Addition to 759,047. Class 37. The magnetic properties of a magnetic material are determined by placing a semiconductor adjacent the surface of the material under test, the semi-conductor being of the AIII BV type having a carrier mobility of 6000 cm.2/volt. sec. or more claimed in the parent Specification. The semi-conductor may be used as a Hall plate, or its change of resistance with magnetic field strength may be measured. Fig. 3 shows an arrangement in which the material 23 under test is situated between the poles 21a of an electromagnet. Hall plate 25 is placed against one of the faces of the material in an air gap between it and one of the polepieces and produces an output indicative of the induction in the test material. An additional Hall plate 27 placed edge-on may measure the field near the surface of the specimen, i.e. H By connecting the outputs of the two Hall plates in opposition the magnetization intensity, B-H, may be measured. Fig. 4 shows an arrangement for examining a magnetic plate 32 for anisotropism. The field is produced by current in a central conductor 33 and the semi-conductor is placed in various radial positions to determine maximum and minimum field strength and thus the preferred magnetic direction of the material. Specifications 719,873 and 797,505 also are referred to.

The detector includes a thin-film resistive component (3), at least two first electrical contacts (6, 7) electrically connected to the resistive component (3) that provide for biasing and signal readout, at least one second electrical contact (1) electrically connected to the resistive component (3) that provides bias control, an integral infra-red absorption means (1, 2, 3, 4, 5) and thermal isolation means (10, 11). A focal plane array of detectors may further include a readout integrated microcircuit (RIOC). L'invention concerne un détecteur comprenant un composant résistant à couche mince (3), au moins deux premiers contacts électriques (6, 7) connectés électriquement au composant résistant (3) assurant une polarisation et un affichage de signal, au moins un second contact électrique (1) connecté électriquement au composant résistant (3) fournissant une commande de polarisation, un organe d'absorption intégrale de rayonnement infrarouge (4, 5), et un organe d'isolation thermique (10, 11). Ce détecteur peut également comprendre un microcircuit intégré à affichage (RIOC).

The present invention provides the use of the gene or protein of adenylate kinase 6 (AK6) or the combination of AK6 and other 14 genes or proteins related to male fertility for (i) preparing the agent or kit for detecting male infertility; and/or (ii) preparing the pharmaceutical composition for contraception. L'invention concerne l'utilisation du gène ou de la protéine d'adénylate-kinase 6 (AK6) ou de la combinaison d'AK6 et de 14 autres gènes ou protéines associés à la fécondité mâle pour (i) préparer un agent ou une trousse de détection de la stérilité masculine ; et/ou (ii) préparer une composition pharmaceutique pour la contraception. 本发明提供了腺苷酸激酶6 （adenylate kinase 6, AK6）基因或蛋白或其与其他14种男性生育相关基因或蛋白的组合的用途，用于（i）制备检测男性不育的试剂或试剂盒；和/或（ii）制备用于避孕的药物组合物。

In a matrix-addressable apparatus comprising one or more memory devices with multidirectionally switchable memory cells (5) arranged in a passive matrix-addressable array, the memory cells comprise a memory medium in the form of a ferroelectric or electret thin-film memory material capable of being polarized by an applied electric field and exhibiting hysteresis, and preferably the memory material is a polymer or copolymer. A memory device in the apparatus comprises at least a first and a second electrode means (E 1;E2) such that the electrodes ( epsilon 2) of the second electrode means (E2) are provided in recesses (3) in the electrodes ( epsilon 1) of the first electrode means (E1) and oriented orthogonally thereto, the recesses (3) extending only half-way through the electrodes ( epsilon 1) of the first electrode means (E1). The electrodes ( epsilon 2) of the second electrode means (E2) are provided in the recesses (3) surrounded by memory material (4a,4b) which also contacts the crossing electrodes ( epsilon 1) of the first electrode means (E1) whereby a memory cell (5) is defined in the crossing between electrodes ( epsilon 1; epsilon 2) of the first and second electrode means (E1;E2) respectively and formed by a memory material surrounding the electrodes ( epsilon 2) of the second means (E2) on at least three sides thereof, thus providing at least three switching directions in the memory cell (5) at different locations thereof. Two or more memory devices can be stacked in the apparatus according to the invention, thus implementing the latter as a volumetric data storage apparatus.

PROBLEM TO BE SOLVED: To analyze concentration of metallic impurities at high sensitivity without producing a large quantity of residue by employing an acid solution containing hydrofluoric acid and nitric acid at a specific ratio at the time of decomposing a semiconductor thin film or substrate. SOLUTION: A silicon semiconductor substrate 301 is immersed into a mixture solution 302 of hydrofluoric acid and nitric acid in beaker 303 and decomposed. The decomposition solution containing dissolved metallic impurities 304 is then concentrated. When the concentration is continued furthermore the decomposition solution is dried and solidified to leave a residue 305. The residue 305 is dissolved again with pure water 306 to prepare a sample for analysis. Subsequently, the silicon substrate is decomposed with a mixture solution of hydrofluoric acid and nitric acid having mixing ratio in the range of 0.3-0.6. When the decomposition solution is concentrated thermally, the residue composed of diammonium hexafluoro silicate itself is reduced thus realizing high sensitivity analysis of metallic impurities. Finally, the sample is analyzed.

PROBLEM TO BE SOLVED: To provide a method capable of detecting and quantifying AlN in a small amount, for example, 1% by mass or less, which is contained in Al or an Al alloy.SOLUTION: Provided is a quantification method of AlN contained in Al or an Al alloy, comprising the steps of: weighing an Al metal material or an Al alloy material containing AlN into a dissolution vessel, then adding an acid to dissolve and remove a metal component, and collecting a residual with a collection material; incinerating the collection material that has collected the residual; adding a flux to the residual obtained through the incineration of the collection material, and heating the flux-added residual to give a molten salt; dissolving the molten salt with an acidic solution to give an acidic solution of the molten salt; and measuring a concentration of Al contained in the acidic solution of the molten salt, and calculating a content of AlN in the Al metal material or the Al alloy material containing AlN.SELECTED DRAWING: None 【課題】ＡｌまたはＡｌ合金中に含有された、例えば１質量％以下である微量のＡｌまたはＡｌ合金を検出でき、且つ定量できる方法を提供する。【解決手段】ＡｌＮを含有するＡｌ金属材またはＡｌ合金材を溶解容器に秤量したのち、酸を加えてメタル分を溶解除去し、残渣を捕集材により捕集する工程と、前記残渣を捕集した捕集材を灰化する工程と、前記捕集材を灰化して得られた残渣へ、融剤を添加し加熱して融解塩とする工程と、前記融解塩を酸性溶液により溶解し、融解塩の酸性溶液とする工程と、前記融解塩の酸性溶液に含有されるＡｌ濃度を測定し、前記ＡｌＮを含有するＡｌ金属材またはＡｌ合金材におけるＡｌＮの含有率を算出する工程とを有する、ＡｌまたはＡｌ合金中に含有されるＡｌＮの定量方法を提供する。【選択図】なし

Analytical apparatus includes a pyroelectric or other thermo-electric transducer element (10) in strip form. Thin film electrodes (12,14) are provided and one or more dots of reagent (16) are deposited on the transducer surface. A small amount of biological or other sample is deposited over the reagent dots which undergo selective colorimetric changes. The transducer is illuminated from below by LED light sources (24) and light absorption in the reagent regions is detected as microscopic heating at the transducer surface. The electrical signal output from the pyroelectric transducer is processed to derive analyte information.

Functionalized films are provided comprising a film of ZnO or ZnO alloy disposed over a supporting substrate and a layer of organic molecules comprising terminal carboxylic acid linkage groups, wherein the organic molecules are bound to a surface of the film of ZnO or ZnO alloy via the terminal carboxylic acid linkage groups. Thin film transistors comprising the functionalized films are also provided. The functionalized films may be formed using polycrystalline ZnO and saturated fatty acids, such as stearic acid.