The detector includes a thin-film resistive component ( 3 ), at least two first electrical contacts ( 6, 7 ) electrically connected to the resistive component ( 3 ) that provide for biasing and signal readout, at least one second electrical contact ( 1 ) electrically connected to the resistive component ( 3 ) that provides bias control, an integral infra-red absorption means ( 4, 5 ) and thermal isolation means ( 10, 11 ). The detector may further include a readout integrated microcircuit (RIOC).

Functionalized films are provided comprising a film of ZnO or ZnO alloy disposed over a supporting substrate and a layer of organic molecules comprising terminal carboxylic acid linkage groups, wherein the organic molecules are bound to a surface of the film of ZnO or ZnO alloy via the terminal carboxylic acid linkage groups. Thin film transistors comprising the functionalized films are also provided. The functionalized films may be formed using polycrystalline ZnO and saturated fatty acids, such as stearic acid.

FIELD: devices with matrix addressing. ^ SUBSTANCE: device with matrix addressing has one or more memory devices with memory cells, made with possible switching in several directions and built in form of passive elements massive with matrix addressing. Memory cells has memory environment in form of ferroelectric or electret thin-film material, capable of polarization under effect from applied electric field and showing hysteretic properties, while it is recommended, that memorizing material was polymer or copolymer. Memory device in device has at least first and second electrode sets. Second set electrodes are positioned in grooves, made on first set electrodes, and are directed orthogonally to first set electrodes, while grooves are deep only for half-height of first said electrodes. Second set electrodes in grooves are surrounded by memorizing material, which is also in contact with first set electrodes intersecting with it. Thus, memory cells are formed in places of intersection of first and second electrode sets, formed by memorizing material, which from at least three sides surrounds second set electrodes, and these three different areas provide at least three directions for switching the memory cell. Two or more memorizing devices can be included in a packet, to realize a device with possible volumetric data storage. ^ EFFECT: higher efficiency, simplified construction, lower costs. ^ 8 dwg, 17 dwg

In a matrix-addressable apparatus comprising one or more memory devices with multidirectionally switchable memory cells (5) arranged in a passive matrix-addressable array, the memory cells comprise a memory medium in the form of a ferroelectric or electret thin-film memory material capable of being polarized by an applied electric field and exhibiting hysteresis, and preferably the memory material is a polymer or copolymer. A memory device in the apparatus comprises at least a first and a second electrode means (E 1;E2) such that the electrodes ( epsilon 2) of the second electrode means (E2) are provided in recesses (3) in the electrodes ( epsilon 1) of the first electrode means (E1) and oriented orthogonally thereto, the recesses (3) extending only half-way through the electrodes ( epsilon 1) of the first electrode means (E1). The electrodes ( epsilon 2) of the second electrode means (E2) are provided in the recesses (3) surrounded by memory material (4a,4b) which also contacts the crossing electrodes ( epsilon 1) of the first electrode means (E1) whereby a memory cell (5) is defined in the crossing between electrodes ( epsilon 1; epsilon 2) of the first and second electrode means (E1;E2) respectively and formed by a memory material surrounding the electrodes ( epsilon 2) of the second means (E2) on at least three sides thereof, thus providing at least three switching directions in the memory cell (5) at different locations thereof. Two or more memory devices can be stacked in the apparatus according to the invention, thus implementing the latter as a volumetric data storage apparatus.

The detector includes a thin-film resistive component ( 3 ), at least two first electrical contacts ( 6, 7 ) electrically connected to the resistive component ( 3 ) that provide for biasing and signal readout, at least one second electrical contact ( 1 ) electrically connected to the resistive component ( 3 ) that provides bias control, an integral infra-red absorption means ( 4, 5 ) and thermal isolation means ( 10, 11 ). The detector may further include a readout integrated microcircuit (RIOC).

In a matrix-addressable apparatus comprising one or more memory devices with multidirectionally switchable memory cells (5) arranged in a passive matrix-addressable array, the memory cells comprise a memory medium in the form of a ferroelectric or electret thin-film memory material capable of being polarized by an applied electric field and exhibiting hysteresis, and preferably the memory material is a polymer or copolymer. A memory device in the apparatus comprises at least a first and a second electrode means (E 1;E2) such that the electrodes ( epsilon 2) of the second electrode means (E2) are provided in recesses (3) in the electrodes ( epsilon 1) of the first electrode means (E1) and oriented orthogonally thereto, the recesses (3) extending only half-way through the electrodes ( epsilon 1) of the first electrode means (E1). The electrodes ( epsilon 2) of the second electrode means (E2) are provided in the recesses (3) surrounded by memory material (4a,4b) which also contacts the crossing electrodes ( epsilon 1) of the first electrode means (E1) whereby a memory cell (5) is defined in the crossing between electrodes ( epsilon 1; epsilon 2) of the first and second electrode means (E1;E2) respectively and formed by a memory material surrounding the electrodes ( epsilon 2) of the second means (E2) on at least three sides thereof, thus providing at least three switching directions in the memory cell (5) at different locations thereof. Two or more memory devices can be stacked in the apparatus according to the invention, thus implementing the latter as a volumetric data storage apparatus. La présente invention concerne un appareil à adressage matriciel comprenant un ou plusieurs dispositifs mémoire comportant des cellules mémoire commutables multidirectionnellement (5) agencées en un réseau d'adressage matriciel passif, dans lequel les cellules mémoire comprennent un support mémoire sous la forme d'un matériau mémoire ferroélectrique ou électret à couche mince pouvant être polarisé par un champ électrique appliqué et présentant une hystérésis, lequel matériau mémoire est de préférence un polymère ou un copolymère. Un dispositif mémoire de l'appareil comprend au moins des premiers et des seconds moyens électrodes (E 1;E2), tels que les électrodes ( epsilon 2) des seconds moyens électrodes (E2) sont placées dans des cavités (3) formées dans les électrodes ( epsilon 1) des premiers moyens électrodes (E1) et orientées de façon orthogonale par rapport à ces dernières, les cavités (3) ne s'étendant qu'à moitié à travers les électrodes ( epsilon 1) des premiers moyens électrodes (E1). Les électrodes ( epsilon 2) des seconds moyens électrodes (E2) sont placées dans les cavités (3) entourées par le matériau mémoire (4a,4b) qui est également en contact avec les électrodes transversales ( epsilon 1) des premiers moyens électrodes (E1), ce qui fait qu'une cellule mémoire (5) est définie à l'intersection entre les électrodes ( epsilon 1, epsilon 2) des premiers et seconds moyens électrodes (E1 ;E2) respectivement, et est formée par un matériau mémoire entourant les électrodes ( epsilon 2) des seconds moyens électrodes (E2) sur au moins trois côtés de ces dernières, constituant de la sorte au moins trois directions de commutation dans la cellule mémoire (5), en différents emplacements de cette dernière. Deux ou plusieurs dispositifs mémoire peuvent être empilés dans l'appareil de l'invention, ce qui permet de transformer ce dernier en un appareil de stockage de données volumétrique.

995, 307. Magnetic testing apparatus. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Sept. 17, 1963 [Sept. 20, 1962], No. 36562/63. Heading G1N. The strength of a magnetic field is determined by measuring the times set which the field in a thin film of uniaxial anisotropic magnetic material 3, placed in the field, and subjected also to a field parallel to the film and its preferred direction of magnetization which is variable in strength in a manner periodically to reverse the direction of magnetization : the times of reversal being indicated by pulses generated in a coil 4 by the reversals. The varying field is generated by a coil 2 energized by a source 1 to produce a field varying linearly with time and having equal rise and decay times. Reference pulses are produced by a unit 7 as the current passes through zero, and the time intervals T 1 , T 2 , T 3 , T 4 are used in devices 8 and 6 to give a measure of the field strength in the preferred direction, and in a direction at right angles thereto.

789,667. Electric analogue calculating systems; power and power factor measurements; semiconductor devices. SIEMENS-SCHUCKERTWERKE AKT.-GES. Sept. 21, 1954 [Sept. 21, 1953; Sept. 21, 1953; Sept. 23, 1953; Jan. 8, 1954; Jan. 29, 1954], No. 27328/54. Class 37. [Also in Groups XXXV, XXXVIII and XL (c)] Apparatus for producing from input analogue voltages or currents a corresponding analogue voltage or current of the product, quotient, or reciprocal of the input variables comprises at least one semi-conductor member responsive to a magnetic field, within which is formed a magnetic barrier layer, which has a carrier mobility of at least 6000 cm.2/volt/sec., and which is composed of a compound of constitution AIII BV ; wherein AIII is an element (boron, aluminium, gallium, or indium) of the third group of the Periodic Table and BV is an element (nitrogen, phosphorus, arsenic or antimony) of the fifth group thereof; and may particularly be indium antimonide or indium arsenide; the semi-conductor member being (a) subjected to a magnetic field dependent on a voltage or current representing a first input quantity to vary the electrical resistance thereof connected in series with a linear resistance, each resistance being traversed in opposite senses by identical currents derived from voltages or currents representing a second input quantity, So that the algebraic sum of the respective voltage drops produces an output voltage or current representing the product or quotient of the input quantities, or the reciprocal of either when the remaining quantity is held constant; or (b) subjected to a magnetic field dependent on a voltage or current representing a first input quantity, and traversed by a current dependent on a voltage or current representing a second input quantity, to generate a Hall effect voltage across such member from which is derived an output voltage or current representing the product or quotient of the input quantities, or the reciprocal of either when the remaining quantity is held constant. In Fig. 1 equal semi-conductive resistances R1, R2 as defined above and comparatively small ohmic resistances RV1, RV2 are connected in series and equal currents J2 analogous to an input quantity flow from the ends to the centre point of the resistance chain; the resistance R1 being variable in response to the magnetic field of winding W1 excited by a current J1 analogous to another input quantity. It is shown that the resultant voltage U across the ends of the semiconductive resistances R1, R2 equal to the algebraic difference between the individual voltage drops is proportional to the product of the input quantities. In Fig. 2 two identical semi-conductive resistances R1, R2 similarly connected in series with ohmic resistances RV1, RV2 and carrying equal opposed currents J2 analogous to an input quantity are subjected to magnetic fields derived from respective windings W1, W2 energized by a current J1 analogous to another input quantity, and from auxiliary windings W11, W21 energized by a current J3 derived from a constant voltage source, the source of currents J1 or J2, or the output. Connections are such that the resultant fields operating on resistances R1, R2 are respectively the difference and the sum of the fields of the individual windings; and as before the resultant voltage U across resistances R1, R2 is shown to be proportional to the product of the input quantities, compensated for deviations of linearity between the instantaneous values of R1, R2 and their controlling fields. In Fig. 3 (not shown) the respective voltages developed across two semi-conductive resistances energized in series by a first analogue current (one of which resistances is magnetically excited in response to a second analogue current) are supplied to separate control windings of a magnetic amplifier whose output is analogous to the product of the input quantities; while in Fig. 4 (not shown) the non-linear resistance sensitive to a magnetic field controlled analogously to the divisor is connected in series with an ohmic resistance and a source of voltage analogous to the dividend, to develop voltage across the ohmic resistor approximately proportional to the quotient. In Fig. 5 the dividend voltage U1, from a source having resistance Ri is connected in series with a semi-conductive resistance R1 controlled by the magnetic field of winding W1 energized by the divisor current J1, and with ohmic resistances R2, R3, R4 and RP. Voltage U2 appears across R2, and U3 across R3, which is also the load resistance of an A.C. energized magnetic amplifier MV incorporating an output RS rectifier bridge 8, whose control windings - are 2 connected in series across RP and whose rectified output current J3 is opposed in resistance R3 to the current J2 from voltage source U1. Disregarding RP and R4, if R3J3 = J2 (a + R2 + RS and R3 + Ri) where a is the resistance of R1 for zero field, and since #U = O = U1 + [a + R2 + RS + R3 + Ri + J1] + U3 and U3 = J2[a + R2 + RS + R3 + Ri]; then J2 = U1/c.J1 where c is a constant. In a modifica- tion (Fig. 6, not shown) the magnetic amplifier control windings are energized directly in series with resistances R2, R3 and R4, which may be given a temperature coefficient such as to compensate for variations with temperature of the other resistances of the network. A mathematical analysis of the compensation of the system to variations of temperature and other disturbing factors is given. The magnetic amplifiers are replaceable by semi-conductor amplifiers in the circuit of Fig. 7, which is similar to that of Fig. 5 but incorporates a resistance RS corre- RS sponding to the control windings - in series 2 with R1, across which is connected the input of a transistor T, whose output in series with a unidirectional voltage source U is connected across resistance R3 in series with RS and the output resistance R2. Non-linearity of the initial region of the resistance field curve of the member R1 may be eliminated by superimposing the constant auxiliary field of a permanent or electromagnet upon that of the control winding. Fig. 8 shows structurally a control winding W1 on a two-part gapped armature 13, 14 excited by a permanent magnet M; the variable semiconductor resistance R1 being located in the central leg of the armature and insulated therefrom by layers 15, 16 of non-conductive permanent magnet material such as ferrite. Fig. 9 shows control winding W1 wound about the central leg of an armature comprising a pot 19 and a cover 20 of magnetic material; the leg comprising non-conductive permanent magnets M1, M2 of ferrite retaining a central semiconductor disc constituting the resistance R1; the external connections being made to the centre and periphery thereof. The devices of Figs. 5-9 may be applied to operate relays in combination with magnetic or transistor amplifiers, into which a time delay factor may be introduced, for the protection of electric supply systems and machines and also to determine power; and A.C. power factor by multiplying voltage U and wattful current J cos # and dividing the product by the product of the rectified values of voltage and current U and J. The devices are also applicable to determination of the running diameter of a take-up reel as the quotient of the speed of movement of the wound material and the speed of the reel, determined as voltages derived from tachometer generators; the quotient voltage being applicable to control of the winding tension. Quotients, reciprocals, and products are also determinable utilizing semi-conductors exhibiting the Hall effect, e.g. plate 62 (Fig. 10) of indium antimonide or arsenide perpendicular to the magnetic field of an armature winding 61 excited by a current J1 due to a voltage U1 (proportional e.g. to that across a motor), the plate passing a vertical current J2 due to a voltage U2 (proportional e.g. to the motor load current). A voltage appearing across horizontal electrodes 63, 64 of the plate is proportional to the product U1, U2 (or e.g. the motor power) and is amplified for indication. Resistances R1, R2 in series with constant voltages may be varied in proportion to factors to be multiplied. The wound armature 61 is replaceable by a permanent magnet whose field is either constant or mechanically variable in response to a required factor. Fig. 11 shows a device for determining a reciprocal value of a factor represented by a voltage U energizing with current J the magnetic field windings 101, 102 whose flux intersects a semiconductive resistance member 103 of indium arsenide or antimonide having Hall voltage electrodes 104, 105 developing voltage U connected to the input of an e.g. magnetic amplifier 107 through an opposing comparison voltage source 106; the amplified output producing a current through a resistance 109 in series with the semi-conductive member 103. It is shown that the amplifier output current represents the reciprocal of the input voltage U. The magnetic flux may be varied mechanically in response to the input factor. Fig. 12 shows a similar device wherein the amplifier 107 excites the magnetic field windings 101, 102 and the input voltage U in series with resistance 116 passes current J through the semi-conductive resistance 103 whose electrodes 104, 105 develop a Hall voltage which excites a bridge circuit comprising linear resistances 112, 113 in combination with compensating non-linear resistances 114, 115, whose unbalance voltage energizes the amplifier input. The output current is shown to represent the reciprocal of the input factor. Fig. 13 shows a device for determining a quotient wherein an 1 1 amplified output current - proportional to - in J U the magnetic field windings 101, 102 of the device shown in Fig. 11 represents the reciprocal of a first input factor and passes not only through semi-conductive Hall resistance 103