PROBLEM TO BE SOLVED: To obtain an oxide sintered compact of fluorite type or its derivative structure whose interface is clean without purifying raw material powder and to provided a method for producing the sintered compact. SOLUTION: In a method for producing an oxide sintered compact having a crystal structure of fluorite type or its derivative structure, when the oxide powder of a raw material is formed, an active oxide colloid of Si or Al is uniformly added in a wet state to the powder or is uniformly mixed after the formation of the powder. Consequently impurities of Si or Al in the sintered compact are collected as a precipitate to produce an oxide sintered compact having a crystal structure of fluorite type or its derivative structure with an interface from which the impurities are removed.

The invention is a device for gauging the status of a material such as a fat or an oil. The device comprises: a housing; a hollow connecting element; a substrate, attached at the opposite end of the hollow connecting element; a sensor, proximate the substrate, for measuring an electrical property of the material being tested; a protective coating, wherein the protective coating covers the sensor and can be applied using either a thin-film or a thick-film technology; and, an electronic evaluation unit connected via at least one electric line to the sensor; and, is arranged proximate the housing and/or proximate the end of the connecting element that faces the housing.

The present invention provides a method of measuring the thickness of a thin film or thin layer by a spectroscopic measurement, which is applicable to the measurement of a multiple layered film whose layers have different refractive indices. According to the method, an interference light from the film is measured to create a measured spectrum. The waveform of the measured spectrum can be approximately represented by a linear sum of base spectrums. Accordingly, various constructed spectrums are created using base spectrums each having a cycle interval as a parameter. Then, the constructed spectrum that minimizes the square error against the measured spectrum is identified. The least square error is calculated for each of predetermined cycle intervals. A graph is drawn to represent the relation between the least square error and the cycle interval. The correspondence between the layers and the plural minimum points of the least square error appearing on the graph is determined. The thickness of each layer is calculated from the cycle interval at which the minimum point appears and the refractive index of the layer.

To provide an observation method capable of observation of the same field of view from a single histopathological specimen or cytology specimen by multiple observation means including a scanning electron microscope.SOLUTION: A method for observing a histopathological specimen or a cytology specimen with a scanning electron microscope according to an embodiment of the present invention includes a step of applying a protective agent for electron microscopy containing a living environment-imparting component, a saccharide and an electrolyte as main components, and water, an organic solvent or a mixed solvent of water and an organic solvent to a stained histopathological specimen or cytology specimen to form a thin film of the specimen by irradiation with electron beam or plasma.SELECTED DRAWING: Figure 2 【課題】単一の病理組織標本または細胞診標本から、走査型電子顕微鏡を含む複数の観察手段による同一視野の観察を可能とすること。【解決手段】本発明の一実施形態に係る病理組織標本または細胞診標本の走査型電子顕微鏡による観察方法は、染色された病理組織標本または細胞診標本に、生存環境付与成分、糖類および電解質を主成分として含有する電子顕微鏡観察用保護剤と、水、有機溶媒または水と有機溶媒の混合溶媒を含む標本用保護液を塗布し、電子線またはプラズマを照射して前記標本の表面に薄膜を形成する工程を含むことを特徴とする。【選択図】図２

PURPOSE:To measure the thickness of silicon thin film easily with high reliability. CONSTITUTION:A coherent light generating source 2 projects a near infrared light toward a silicon thin film sample 1, where a silicon thin film is formed on a transparent substrate, and a sensor 3 detects the intensity of transmitted light. A light intensity analog signal is delivered from the sensor 3 to an AD converter 5 where it is converted into a digital light intensity signal corresponding to the transmittance of silicon thin film in the silicon thin film sample 1. A CPU 4 then compares the digital light intensity signal with a digital standard light intensity signal corresponding to a standard transmittance prestored in a ROM 6 thus calculating the difference representative of variation of transmittance. A decision is made that the thickness of silicon thin film is acceptable if the variation of transmittance is within an allowable range otherwise it is rejected. Refractive index of silicon thin film can also be measured.

The present invention provides a PTX3 monoclonal antibody or antibody Fab fragment thereof and use thereof. The aforementioned monoclonal antibody or antibody Fab fragment thereof specifically inhibit or slow down the binding of PTX3 to the PTX3 receptor, and may be used for a kit and method for detecting PTX3, and a pharmaceutical composition which inhibits or slows down diseases or symptoms associated with PTX3 and PTX3 receptor binding, and a use thereof. La présente invention concerne un anticorps monoclonal PTX3 ou un fragment Fab de l'anticorps et une utilisation associée. Ledit anticorps monoclonal ou fragment Fab de l'anticorps susmentionné inhibe ou ralentit de manière spécifique la liaison de PTX3 au récepteur PTX3, et peut être utilisé pour un kit et un procédé de détection de PTX3, et une composition pharmaceutique qui inhibe ou ralentit des maladies ou des symptômes associés à la liaison à PTX3 et au récepteur PTX3, ainsi qu'une utilisation associée. 本发明提供了一种PTX3单株抗体或其抗原结合片段及其用途。前述单株抗体或其抗原结合片段专一性抑制或减缓PTX3与PTX3受体的结合，可应用于检测PTX3的套组及其检测方法，以及抑制或减缓PTX3与PTX3受体结合相关的疾病或症状的医药组合物及其用途。

Provided are a transparent or semi-transparent material microscopic-defect detection system and method, said detection system comprising: a coherent light source (10), used for emitted coherent beam scanning of a transparent or semi-transparent sample material; a photoelectric sensor (20), used for acquiring scattered light intensity imaging of said sample material; a controller (40), used for obtaining the scattered light intensity imaging corresponding to the scan position; performing a Fourier transform on the scattered light intensity imaging to obtain a corresponding amplitude spectrum and phase spectrum, and obtaining the cutoff frequencies of said amplitude spectrum and phase spectrum; said cutoff frequencies correspond to the scan position and corresponding relative position of acquisition; monitoring the scan position when the cutoff frequency does not fall within a frequency threshold range, taking the scan position to be a defect position, and determining a defect according to said defect position; the frequency threshold range is calculated in advance according to the Lorenz–Mie theory and is a reference value range based on the light scattering of an impure medium corresponding to the relative position of acquisition. L'invention concerne un système et un procédé de détection de défaut microscopique dans un matériau transparent ou semi-transparent, ledit système de détection comprenant : une source de lumière cohérente (10), utilisée pour un balayage d'un matériau échantillon transparent ou semi-transparent par un faisceau cohérent émis ; un capteur photoélectrique (20), utilisé pour acquérir des images de l'intensité lumineuse diffusée par ledit matériau échantillon ; un dispositif de commande (40), utilisé pour obtenir les images de l'intensité lumineuse diffusée correspondant à la position de balayage ; effectuer une transformée de Fourier sur les images de l'intensité lumineuse diffusée pour obtenir un spectre d'amplitude et un spectre de phase correspondants, et obtenir les fréquences de coupure dudit spectre d'amplitude et dudit spectre de phase ; lesdites fréquences de coupure correspondent à la position de balayage et à la position relative correspondante d'acquisition ; surveiller la position de balayage lorsque la fréquence de coupure ne se situe pas dans une plage de fréquences seuils, considérer la position de balayage comme correspondant à la position d'un défaut, et déterminer un défaut en fonction de ladite position du défaut. La plage de fréquences seuils est calculée à l'avance selon la théorie de Lorenz-Mie et constitue une plage de valeurs de référence fondée sur la diffusion de la lumière par un milieu impur correspondant à la position relative d'acquisition. 一种透明或半透明材料微观缺陷检测系统及方法，检测系统包括：相干光源（10），用于出射相干光束扫描透明或半透明的检材；光电传感器（20），用于采集所述检材的散射光强成像；控制器（30），用于获取与扫描位置对应的所述散射光强成像；对散射光强成像进行傅里叶变换，得到相应的幅度谱和相位谱，获取所述幅度谱和相位谱的截止频率；所述截止频率与所述扫描位置及其对应的相对采集位置对应；监测所述截止频率不属于频率阈值范围时的扫描位置，将该扫描位置作为缺陷位置，根据所述缺陷位置确定缺陷；频率阈值范围为预先根据洛伦茨-米氏理论计算出的，与所述相对采集位置对应的基于非纯净介质光散射的参考值范围。