The present invention provides a method of measuring the thickness of a thin film or thin layer by a spectroscopic measurement, which is applicable to the measurement of a multiple layered film whose layers have different refractive indices. According to the method, an interference light from the film is measured to create a measured spectrum. The waveform of the measured spectrum can be approximately represented by a linear sum of base spectrums. Accordingly, various constructed spectrums are created using base spectrums each having a cycle interval as a parameter. Then, the constructed spectrum that minimizes the square error against the measured spectrum is identified. The least square error is calculated for each of predetermined cycle intervals. A graph is drawn to represent the relation between the least square error and the cycle interval. The correspondence between the layers and the plural minimum points of the least square error appearing on the graph is determined. The thickness of each layer is calculated from the cycle interval at which the minimum point appears and the refractive index of the layer.

805,051. Electric indicating systems. COUNCIL FOR SCIENTIFIC & INDUSTRIAL RESEARCH. Nov. 28, 1955 [Nov. 6, 1954], No. 32189/54. Class 40 (1). A moisture-sensitive capacitor is made by subjecting an aluminium support to two stages of electrolytic oxidation or anodizing, the first stage producing an oxide layer of high porosity and the second an inner non-porous layer which is highly insulating. A further layer of aluminium thin enough to be pervious to vapour is then applied to act as the second plate of the condenser. Alternatively the outer electrode may be a coating of graphite applied to the moisture-sensitive layer in an aqueous solution. During manufacture a 15 cm. length of 3/ 32 inch aluminium welding rod is degreased with carbon tetrachloride; at least 10 cms. is abraded with a steel wool pad to remove the air-formed aluminium oxide film and etched in hydrochloric acid, dipped in sodium hydroxide and then washed. A 9 cm. length is then electrolytically oxidized by immersing it vertically in an acid bath of dilute sulphuric acid, a lead plate acting as the other electrode. A 50 cycle A.C. voltage is used and a current of 310 milliamps maintained for 25 minutes. This produces a porous aluminium oxide layer. Six cms. of the anodized end is then anodized in a solution of boric acid, ammonium borate, or sodium phosphate. An aluminium plate is used for the electrode and about 12 volts D.C. applied for 30 minutes when the current reaches a minimum value (which is less than 5 microamps) the rod is cooled and 5 cms. cut off, leaving 1 cm. free for connection purposes. This process produces a high resistance dielectric beneath the porous layer. All except 4 cms. of the device is then coated with a thick viscous solution of acrylic resin, e.g. Perspex (Registered Trade Mark) in chloroform and coloured by the addition of methyl red. The whole of the vapour sensitive surface is then immersed in a solution of dilute nitric acid for 1 minute to increase its sensitivity. A thin film of aluminium is then deposited on the vapour-sensitive surface of the rod by rotating the rod near a source of aluminium vapour in a vacuum chamber. A shield prevents deposition of aluminium more than 5 cms. form the tip. Bared copper wire is then wound tightly on the aluminium which overlaps the Perspex coating and the wire together with the shank end from the negative and positive connections respectively. Specification 732,969 is referred to.

The invention relates to a thin film-type or wafer-type medicinal preparation for the oral administration of active ingredients. Said preparation is characterised in that it contains at least one matrix-forming polymer in which at least one active ingredient and at least one carbon-dioxide-forming agent are dissolved or dispersed. La invencion se refiere a preparados farmaceuticos en forma de pelicula o de oblea de poco espesor para la administracion de principios activos, que se caracterizan por contener el preparado al menos un polimero formador de matriz, en el cual se encuentra disuelto o disperso al menos un principio activo y al menos un generador de dioxido de carbono.

770,066. Semi-conductor devices. SIEMENSSCHUCKERTWERKE AKT.-GES. Oct. 20, 1954 [Oct. 20, 1953; April 24, 1954], No. 30283/54. Addition to 750,134. Drawings to Specification. Class 37. [Also in Group XL (b)] A semi-conductor device according to the parent Specification has a surface of the semiconductor subjected to radiation which provides a third means for controlling the currentvoltage characteristic of the device. The device, as described in the prior Specification, comprises an intrinsic semi-conductor body subjected to electric and magnetic fields at right angles to each other, thereby modifying the resistance of the semi-conductor body due to the production of a depleted region (the magnetic barrier layer) having fewer electrons and holes than exist under thermal equilibrium conditions. The depleted region may be 10 cms. in thickness. In the present invention, radiation is applied to the depleted side of the body to generate electron-hole pairs therein which reduces the extent and intensity of the depleted region, and thus modifies the semi-conductor resistance. The arrangement may be such that the radiation penetrates the whole of the magnetic barrier layer, thus effectively reducing its thickness, or only the surface region, thus weakening the effect of the barrier layer by increasing the number of carriers in this region. The radiation may consist of light, infra-red, X-rays, γ-rays, or particles such as neutrons or α or #-rays. Details of the depth of penetration for varying wavelengths, are given for germanium and indium antimonide. Silicon, germanium, grey tin, FeS, and A III B V compounds such as InSb, GaSb, AlSb and InAs, are given as examples of semi-conductor material. The importance of carrier mobility is discussed and the invention enables the dark current to be maintained at a low level when using relatively low resistance materials. The arrangement is less sensitive to temperature than PN-junction arrangements. The device may be used as a rectifier, as described in the parent Specification, by causing two opposite surfaces of the semiconductor body to have different carrier recombination characteristics, and the radiation may then be used to control the rectification characteristic. By connecting such a device in series with an A.C. source and a D.C. motor (Fig. 8 not shown), the speed of the motor may be controlled according to the intensity of the radiation. The device may also be used as a photo-electric cell, and also for demodulating a modulated radiation to provide an electrical output (Fig. 11, not shown).

PROBLEM TO BE SOLVED: To provide an infrared emission lamp formed into a simple and small lamp structure having high infrared emissivity and used for a sensor of gas, a concentration detector or the like. SOLUTION: This infrared emission lamp is so structured that a ceramic thin film 5 is formed by thermal spraying ceramic powder 4 having high infrared emissivity on a glass surface of a head part 1a of a lamp body 1 formed into a small glass bulb filled with gas 3 with a filament 2 disposed, the upper surface of the thin film 5 is coated with one layer of a titanium oxide solution 6 to dispose an infrared emitting double coating part 8 as a whole, and an infrared ray in a long wavelength region such as an infrared emission wavelength of 5-6 μm is emitted by the use of infrared emission from the filament of the lamp body and infrared emission from the coating part 8 directly heated by using heat generated by the lamp itself as a heat source.

Certain exemplary embodiments can provide a method, which can comprise fabricating a system. The system can comprise a light amplification element and a charge transport element. Each of the light amplification element and a charge transport element can comprise one or more of a graphene layer, graphene oxide, graphene nano platelets, functionalized graphene, graphene/superconductor composite, tubular shaped nano carbon, semiconductor powder, thin film, nano wire, and nano rod. Certains modes de réalisation à titre d'exemples peuvent fournir un procédé, qui peut comprendre la fabrication d'un système. Le système peut comprendre un élément d'amplification de lumière et un élément de transport de charge. Chacun parmi l'élément d'amplification de lumière et un élément de transport de charge peut comprendre un ou plusieurs parmi une couche de graphène, de l'oxyde de graphène, des nanoplaquettes de graphène, du graphène fonctionnalisé, un composite graphène/supraconducteur, du nanocarbone de forme tubulaire, une poudre semi-conductrice, un film mince, un nanofil et une nanotige.

A strain gauge sensor for sensing stresses and deformations in mechanical members or structures, comprising a support substrate in form of a thin plate, made of an electrically-insulating material, preferably ceramic material, bearing on one face at least one thick-film resistor; said support substrate being adapted to be firmly attached with its other face onto a member or structure of which stresses and deformations are to be locally sensed, so that said stresses or deformations determine through the substrate corresponding deformations of said at least one thick-film resistor.

Sensor device for ion channel recordings; liquid-liquid measurements and resistive pulse particle counting comprising; at least one sensor element; the element comprising a diamond thin film substrate and a pore which is a nanopore or a micropore included in the substrate. This device may be used in analysis, for instance the device may be used for single molecule detection of an apialyte (e.g. DNA), for the analysis of interactions between a sensor element and an analyte, for the detection of pore forming entities, or for the determination of ion transfer.