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4931件专利文献

【发明专利】 Improvements in or relating to thermal conductivity detector assemblies

申请号:GB4172559 申请日:1970-08-16
公开/公告号:GB943550A 公开/公告日:1970-08-16
申请人:GAS COUNCIL 发明人:GIBBONS PAUL ALBERT;MARHOFF FREDERICK ALBERT
代理人: 分类号:
机构代理:
显示摘要
943,550. Measuring electrically. GAS COUNCIL. Dec. 8, 1960 [Dec. 8,1959], No. 41725/59. Heading G1N. [Also in Division B1] A thermal conductivity gas/vapour detector assembly comprises a block of material having good thermal conductivity through which block are disposed at least three separate passages for gas or vapour, each passage having disposed therein a thermistor as hereunder defined. The preferred construction comprises a brass block with cylindrical gas passages. The individual cells are connected in series by tubes packed with chromatographic absorbent. The term Thermistor is defined as a temperature sensitive device comprising a semi-conductor,the electrical resistance of which decreases rapidly with an increase in temperature. The invention is particularly described with reference to 3 drawings (only one shown) and includes the detector block 40 housing thermistors 45, 48, 50, 53, 54, a multiple volume gas burette 58-63 with means 65 to fill, purge and measure sample pressure 66, a plurality of packed columns 47, 49, 51, 52 and associated carrier gas flow controls 41, 42, 43, 55, 56, 57. A Table shows separations effected on various column packings using argon or hydrogen as carrier gases. The difference in thermal conductivity of the gas or vapour passing through the detector is measured by a circuit not detailed in the Specification. Specification 777, 233 is referred to.

【发明专利】 Improvements in or relating to the manufacture of thermocouples

申请号:GB1771762 申请日:1970-08-16
公开/公告号:GB1004738A 公开/公告日:1970-08-16
申请人:APPLEBY AND IRELAND LTD 发明人:APPLEBY ERIC GEORGE;LOWER RICHARD NEIL
代理人: 分类号:
机构代理:
显示摘要
1,004,738. Semi-conductor devices. APPLEBY & IRELAND Ltd. Aug. 7, 1963 [May 8, 1962], No. 17717/62. Heading H1K. A thermocouple is produced by causing the ends of a pair of wires projecting from the end of a metallic sheath, through which they pass and from which they are insulated, to touch one another and then uniting them by electron beam welding. As shown, Fig. 2, a thermocouple cable comprises two conductors 12, 13 of dissimilar metals, supported and insulated by a packing of metalli coxide 14, contained in a stainless steel sheath 11. The cable is drawn thro ugh a die to the required size and one end is inserted in a bore in a bush 21 and stripped to expose the conductors. The cable is mounted in a vacuum chamber and an electron beam 15 is used to weld sheath 11 to bush 21. As shown, Fig. 5, the ends of the conductors are bent into contact and then welded together, a ferrule 17 of Iconel (Registered Trade Mark) or stainless steel is welded to the sheath at 18, and the assembly is sealed by welding a plug 19 into the end of ferrule 17, all the joints being made by electron beam welding. Ferrule 17 may be filled with insulating material before inserting plug 19. In use the flange 22 of bush 21 may be welded to the casing of the apparatus. Specification 940,850 is referred to.

【发明专利】 Improvements in or relating to voltage-measuring devices

申请号:GB3602561 申请日:1970-08-16
公开/公告号:GB953594A 公开/公告日:1970-08-16
申请人:PHILIPS ELECTRICAL IND LTD 发明人:无
代理人: 分类号:H03K17/78
机构代理:
显示摘要
953,594. Semi-conductor pulse circuits. PHILIPS ELECTRICAL INDUSTRIES Ltd. Oct. 6, 1961 [Oct. 11, 1960], No. 36025/61. Heading H3T. [Also in Division G4] A counter constructed from photoconductive and electroluminescent devices is shown in Fig. 3. The counter is primed by closing switch S, whereupon a flash of light from lamp NI illuminates photoconductor 20 and electroluminescent device 21 is energized from terminals 18, device 21 creating a holding circuit for itself by illuminating a photoconductor 22. Device 21 also primes the first stage of the counter proper by illuminating photoconductor 24. A pulse applied to terminals 38 energizes an electroluminescent strip 19 which is common to all stages of the counter, and device 25 is then energized through a further photoconductor 40 associated with strip 19. Device 25 creates a holding circuit for itself through photoconductor 26, extinguishes device 21 by creating a shunt path through a photoconductor 23, and primes the next stage 29 by illuminating photoconductor 28. The following stages operate in a similar manner. The counter may be used to control a stepvoltage generator, Fig. 1, forming a balancing voltage source in an analogue-to-digital converter. The unknown voltage is applied at X, and devices 23, 25, 29 . . . of Fig. 3 are represented in Fig. 1 by light sources L 0 -L 9 . Initially L 0 is energized and photoconductor R 0 supplies a balancing voltage of 0.1 volts from a 1-volt source B 1 . Assuming an input at X of 0.86 volts, difference amplifier M energizes a lamp A1 which in turn controls a relaxation oscillator, Fig. 2 (not shown) supplying pulses to terminals 38, Fig. 3. Sources L 0 -L 8 are energized in sequence by the counter to produce an increasing step voltage until the input X is exceeded. Amplifier M then extinguishes A1 and lights A2, the latter controlling a further pulse source and counter including electroluminescent devices L 0 1-L 9 1. Devices L 9 1- L 6 1 are energized in turn to reduce the balancing voltage in steps of 0.01 volts until equality is attained.

【发明专利】 Improvements in or relating to transmitting magnetic compass systems

申请号:GB2433056 申请日:1970-08-15
公开/公告号:GB819494A 公开/公告日:1970-08-16
申请人:KELVIN & HUGHES LTD 发明人:CULLEN GRAEME EYRES
代理人: 分类号:
机构代理:
显示摘要
819,494. Etectric indicating systems. KELVIN & HUGHES Ltd. July 26, 1957 [Aug. 8, 1956], No. 24330/56. Addition to 788,544. Class 40 (1). Apparatus for measuring the rotation of a compass magnet 11 relative to a craft on which it is mounted comprises a semi-conductor crystal 10 mounted coaxially with the magnet and in its magnetic field, fed with A.C. along its horizontal axis 12, 13 so that any angular displacement of this axis relative to the horizontal axis of the magnet produces a P.D. across the vertical axis 17, 18 by the Hall effect, which is fed to a motor 22 to realign the axes of the crystal 10 and the magnet 11. The rotation may be telemetered via a known transmitter 26 to remote receivers.

【发明专利】 Improvements in or relating to semi-conductor devices

申请号:GB3377255 申请日:1970-08-15
公开/公告号:GB818065A 公开/公告日:1970-08-16
申请人:SIEMENS AG 发明人:无
代理人: 分类号:H01L29/82
机构代理:
显示摘要
818,065. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Nov. 24, 1955 [Nov. 26, 1954], No. 33722/55. Class 37. A Hall effect device comprises a semi-conductor member with asymmetrical Hall electrodes such that a voltage appears between these electrodes when primary current is flowing but no magnetic field is applied, and means for applying a magnetic field of such magnitude that the Hall potential is reduced to zero or doubled, depending upon the direction of the field. The device may be utilized in switching, control or measuring circuits. Fig. 2 shows a semi-conductor body 1 having primary electrodes 2 and 3, and asymmetrical Hall electrodes 4 and 5 the output from which is applied to a measuring instrument 6. Fig. 3 shows an arrangement comprising three Hall electrodes the initial voltage between electrodes 14 and 15, and 16 and 14 being arranged to be zero and doubled respectively or vice versa according to whether the magnetic field is applied in one or the opposite direction. The magnetic field can thus be used to switch the output to either of electrodes 15 and 16. Other arrangements are described involving more than three Hall electrodes at least two of which are positioned asymmetrically, for switching or control purposes. The relative position of one or more of the electrodes may be made adjustable. The semi-conductor material may consist of Am Bv compounds such as In Sb or In As. Specifications 719,873, 763,348, 797,505 and 802,687 are referred to,

【发明专利】 EQUIPMENT FOR MEASURING DISTRIBUTION OF VOID OR PARTICLE SIZE

申请号:JP0316918 申请日:1970-08-21
公开/公告号:WO2004061428A1 公开/公告日:1970-08-21
申请人:TECHNOS INST CO LTD;TERADA SHINICHI 发明人:TERADA SHINICHI
代理人: 分类号:G01N15/14
机构代理:
显示摘要
Equipment for measuring distribution of void or particle size capable of measuring the size of a void or a particle in a short time with high accuracy. When the size of a void Y existing in a porous insulator film (3) or the size of a particle in a thin film is measured, a sample (5) having the insulator film (3) formed on the surface of a substrate (4) is irradiated, from the surface side thereof, with X-rays R at a specified incident angle thetai larger than the total reflection critical angle of the insulator film (3) but not exceeding 1.3 times the total reflection critical angle of the substrate (4). X-rays beamed into the insulator film (3) and reflected off the surface of the substrate (4) and not entering the void Y but exiting the insulator film (3) are a scattering component and such a scattering component as having a larger exit angle as compared with that when the reflecting component does not enter the void Y but exits the insulator film (3) is detected. La présente invention concerne un équipement pour mesurer la distribution de la taille des vides ou des particules, capable de mesurer la taille d'un vide ou d'une particule en un temps très court, avec une haute précision. Pour mesurer la taille d'un vide (Y) existant dans un film isolant poreux (3) ou la taille d'une particule dans un film mince, on prend un échantillon (5) constitué d'un substrat (4) à la surface duquel se trouve le film isolant (3), et on le soumet depuis sa surface à un rayonnement aux rayons X (r) selon un angle d'incidence theta i supérieur à l'angle critique de réflexion totale du film isolant (3) sans toutefois dépasser de 1,3 fois l'angle critique de réflexion totale du substrat (4). Les rayons X envoyés sur le film isolant (3) et renvoyés par la surface du substrat (4) sans entrer dans le vide (Y) mais ressortant du film isolant (3) sont une composante de dispersion. En l'occurrence, la détection porte sur une telle composante de dispersion dont l'angle de sortie est supérieur à ce qui se produit lorsque la composante se réfléchissant ne pénètre pas dans le vide (Y) mais sort du film isolant (3).

【发明专利】 Improvements in or relating to tuned circuits employing transistors

申请号:GB4379965 申请日:1970-08-16
公开/公告号:GB1119708A 公开/公告日:1970-08-17
申请人:PHILIPS ELECTRONIC ASSOCIATED 发明人:无
代理人: 分类号:H03B5/12
机构代理:
显示摘要
1,119,708. Transistor amplifying and oscillating circuits; remote control of radio receivers. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 15 Oct., 1965 [15 Oct., 1964; 13 Feb., 1965], No. 43799/65. Headings H3Q and H3T. An R.C. coupled transistor circuit which can be adjusted to act as either a high Q circuit or alternatively as an oscillator comprises a first transistor T 1 with its collector connected to the base of a second transistor T 2 . A phase-shifting feedback loop is provided between a further electrode of the second transistor and one of the first transistor, e.g. the network C, R 1 , R 2 connected between the emitters; the arrangement is characterized in that the collector circuit of the first transistor T 1 includes at least two semi-conductor diodes D 1 , D 2 connected in series and arranged in the same direction of conduction as transistor T 1 . The collector circuit also comprises phase-shifting elements, e.g. capacitor C 5 such as to cause a phase-shift equal to but of opposite sign to that of the feedback network at the resonance frequency of the circuit, which is also arranged so that at that frequency the loop gain is substantially equal to unity. The Specification gives mathematical expressions for the necessary conditions, which comprise the inclusion in the collector circuit of transistor T 1 of series resistor R 5 of value double the emitter input resistance of transistor T 2 : each of the diodes D 1 , D 2 should have the same value of differential resistance as the emitter input resistance of transistor T 1 , and this can be varied so as to change the resonance frequency of the circuit by adjustment of the emitter-collector current, by means of resistor R 1 . The value of capacitor C 5 determines the effective Q of the circuit; it is approximately half C, lesser values making Q negative, i.e. causing sustained oscillations to occur. The Specification describes numerous modifications to the circuit, including means for maintaining the resonance frequency constant despite temperature variations (Figs. 3-5, not shown) and the use of transistors to replace resistors R 1 , R 2 (Figs. 6 et seq., not shown); transistor T 2 may also be replaced by a Darling- ton pair (Fig. 6, not shown) and resistor R 5 by diodes (Fig. 7, not shown). Two such resonant circuits may be tuned simultaneously by means of a single variable resistor (Fig. 8, not shown) and may be adjusted so that their resonant frequencies differ by a constant frequency, thus providing gang-tuned input and oscillator circuits for a superheterodyne receiver. In alternative circuits the feedback loop is located between the collector of the second transistor and the base of the first (Figs. 9-13, not shown) and in these the phase-shift may be shared between two stages (Fig. 11, not shown). Transistors of different conductivity type may be employed (Fig. 13, not shown). The Specification also discloses the manner in which two such resonant circuits may be coupled together (Figs. 14, 15, not shown) and the use of a shunt diode in the coupling network to act as a variable impedance for the purpose of gain control (Fig. 17, not shown). The arrangement may be modified by the inclusion of resistance in series with the capacitance C 5 to compensate at high frequencies for the effect of the capacitance between emitter and base (Fig. 16, not shown). When the arrangement is used as local oscillator in a superheterodyne receiver, the frequency may be automatically controlled by a voltage depending on the detected signal; again, the resistor R 1 may be of light-dependent type and controlled, e.g., from a remote light source. In another, e.g. remote control circuit, a single variable resistor may be used to tune over a number of separate desired wavebands, intervening frequencies being excluded by providing gaps in the resistor track which are closed by means of fixed resistors (Fig. 18, not shown). The arrangement may also be used as an amplifier of the modulation type; e.g. a capacitance pick-up may be connected in shunt with capacitor C 5 to vary the circuit Q, i.e. provide amplitude modulation, or resistor R 1 may be varied as a function of the signal, to provide oscillations modulated in frequency and amplitude. In an alternative embodiment, a small part of the current flowing through resistor R 1 is diverted from transistor T 1 , through a signalcontrolled transistor T 5 (Fig. 19, not shown) and flows direct into the diodes D 1 , D 2 . The Specification also discloses modifications of the circuit in which the resistance R 5 is considerably increased in value, to reduce the effect of non- linearity in diodes D 1 , D 2 with appreciable signal amplitudes, resistance being connected in series with capacitor C in compensation (Figs. 20-22, not shown). In an arrangement for providing a high Q circuit of improved stability, a second similar circuit, adjusted just to oscillate, is also provided its output being detected and supplied as a Q control to both circuits.

【发明专利】 Improvements in or relating to semi-conductor devices

申请号:GB1249160 申请日:1970-08-16
公开/公告号:GB952985A 公开/公告日:1970-08-16
申请人:TELEFUNKEN AG 发明人:无
代理人: 分类号:H01L21/22
机构代理:
显示摘要
952,985. Semi-conductor devices. TELEFUNKEN A.G. April 8, 1960 [April 8, 1959], No. 12491/60. Heading H1K. In a transistor, the base zone includes particles (e.g. copper atoms) in a concentration such that the rate of recombination of charge carriers is a maximum adjacent either the emitter or the collector zone and reduces to a minimum adjacent the other of said zones. The Figure shows a device comprising base zone 1, emitter zone 2 and collector zone 3. A recombination layer 4 is provided adjacent the emitter which has the effect of reducing the grounded emitter current amplification factor # to improve the operating cut-off frequency. Alternatively the recombination layer could be adjacent the collector to prevent overloading and prevent storage effects. The recombination layer may be provided by diffusion of copper or nickel atoms.