A dielectrically isolated, pressure responsive silicon diaphragm includes a single crystal substrate bonded to a single crystal strain gage component with an intermediate insulating layer and glass bonding layer. The boric oxide enriched glass has a lower softening temperature than the insulating layer and semiconductor and a matching expansion coefficient. Illustratory products are integral silicon diaphragms, integrated circuits, and power devices for high temperature applications where junction isolation is useless. In the method of fabrication the composite is bonded at elevated temperature under pressure and the temporary substrate is removed mechanically and by a final preferential etch. Active components with thinner semi-conductor layers of uniform thickness can be produced.

858,199. Diode gating circuits. MARCONI'S WIRELESS & TELEGRAPH CO. Ltd. April 9, 1959 [July 17, 1958], No. 23027/58. Class 40(6). Fig. 2 shows a coincidence detector for producing an output on lead 10 only when positive going input signals are present simultaneously at leads 1, 2 and for preventing a noise signal being produced at the output simulating a useful signal even when the two inputs are not simultaneously present. The input signals at 1, 2 are applied to an AND gate comprising semiconductor diodes 4, 5 and also to an OR gate comprising diodes 11, 12 to produce signals at points 3, 13 which are applied to a differential circuit 14 which produces an output to operate relay device 15 when there is a difference in amplitude between the input signals. Since the AND circuit produces an output which is approximately equal to the smaller of its two input signals if large useful signals are present simultaneously at inputs 1, 2 the signals at 3, 13 are of equal amplitude so that no output signal is produced from differential circuit 14 and relay 15 does not operate. If a large signal is present at only one of the inputs 1, 2 the signal at 13 will be very much greater than the signal at 3 so that the differential circuit 14 will actuate relay contact 15 to insert attenuation in the output signal path 10. The delay device 18 and the pulse widening circuit 19 compensate for delay in circuit 14 and thus prevent any noise signal getting to the output 10 even for a short period of time. In the modification shown in Fig. 3 the differential circuit 14 is constituted by a long-tailed pair comprising triodes 14a, 14b the output from which controls electronic switch comprises semi-conductor diodes 15a, 15b which are normally biased by resistor 22 and diode 23. The switch is in the input lead to cathode follower 8 from which the output lead 10 is fed. Resistors 20, 21 attenuate signals supplied via 13 to the valve 14a to ensure that with signal and noise simultaneously at terminals 1, 2 the noise levels at the grids of tubes 14a, 14b are substantially the same and the signal at the grid of valve tube 14b is little more than at the grid of 14a attentuation is thus not inserted in the path of output lead 10. If there is no signal at one of the input terminals I or 2 the output from the long-tailed pair 14a, 14b causes attenuation to be inserted.

PURPOSE:To allow inspection of defective pixel for a poly-crystalline silicon thin film transistor(TFT) array substrate prior to liquid crystal injection process by providing an image processor for detecting the defective pixel. CONSTITUTION:Detection signals being arranged in time series by means of an analog multiplexer 5 are sampled and held in the vicinity of maximum level thereof by a sample & hold circuit 6 according to clock signals generated from a timing generator 1. The holding time is set equal to the clock period of the clock signal. An analog waveform having microdifference of height at the output end of the circuit 6 is sliced by a slicing circuit 7 according to a cutback timing pattern before being fed to a variable gain amplifier circuit 8. The amplified signal is subjected to A/D conversion 9 and fed to an image processor 10 where the average value of charge data is calculated for the pixels of a single data line followed by calculation of the difference from the data.

In a sensor (12) for determining pressure or force a thick-film resistor (11) is pressed onto a carrier (10). When the thick-film resistor (11) is still in the soft state, a force-introducing part (13) is placed onto the thick-film resistor, and the component thus produced is hardened. As a result, a sensor (12) having a virtually uniform load distribution over the entire thick-film resistor is produced, so that its pick-up curve is already linear in the initial range without prestressing.

A spin motor rotation detector for a split phase or two phase motor drive for a gyroscope applies the spin motor supply voltage and the phase winding voltage to a semi-conductor, e.g., the supply voltage is applied as a reference voltage to the gate on a semi-conductor such as a FET used as a demodulator while the phased motor winding provides the source or (signal) input voltage to the FET demodulator. The phase modulation of the phase winding voltage resulting from hunting during operation of the motor is reflected in the output from the demodulator, and the output is applied to a logic level DC output to indicate satisfactory or unsatisfactory speed of operation of the split phase motor during changes in physical orientation of the gyroscope.

Bei einem Sensor (12) zur Bestimmung des Drucks oder der Kraft wird auf einem Träger (10) ein Dickschichtwiderstand (11) aufgedruckt. Mit Hilfe von Leiterbahnen (26) wird das Meßsignal vom Dickschichtwiderstand (11) zu den Ableitungen (17) geführt. Die Kontaktstelle zwischen den Leiterbahnen (26) und den Ableitleitungen (17) liegt außerhalb des direkten Kraftflusses, so daß eine homogene Lastverteilung über den gesamten Bereich des Dickschichtwiderstands (11) möglich ist. In a sensor (12) for determining pressure or force a thick-film resistor (11) is pressed onto a carrier (10). The measurement signal is led from the thick-film resistor (11) to the terminal leads (17) with the aid of printed conductors (26). The contact site between the printed conductors (26) and the terminal leads (17) is situated outside the direct flow of force, so that a homogeneous load distribution is possible over the entire region of the thick-film resistor (11).

A detector of linear or rotary displacement comprises at least one sensing element at least partially provided by a conventional thin film module, and having at least one thin film, the sensing element can include a resistor or a capacitor arranged to be partially immersed in a liquid in a container. In Figure 1, resistors 11, 12 on a substrate 14 are partially immersed in a conductive liquid 20 (having a surface 21) in a container 22. When the container is tilted the immersed portions of resistors 11, 12 increase or decrease respectively. The ratio of the resistances of the non-immersed portions, measured by a bridge indicates the degree of tilt. In a capacitive sensor, a conductive thin film can be covered by dielectric and a conductive liquid, such as mercury, placed in the container.