PROBLEM TO BE SOLVED: To provide a light or radiation detecting device which reduces discharging due to a bias voltage applied to a light or radiation sensitive film. SOLUTION: A semiconductor thick film 1 in an external region A is formed of a polycrystalline semiconductor thick film 1A and a semiconductor thick film 1 in an internal area B is formed of an amorphous semiconductor thick film 1B, so the discharging caused by the bias voltage can be suppressed, so that such malfunction that a detection signal is detected even when no radiation is made incident hardly occurs. Further, the discharging is caused at the peripheral edge part of a voltage application electrode 3, so a device regarding this invention can easily be formed only by forming the polycrystalline semiconductor thick film 1A in the external region A.

An acceleration or vibration sensing device comprises a support structure for fixing to the body 1 the acceleration or vibrations of which it is desired to measure, and including a substrate 2 which is resiliently deformable through the effect of an acceleration of the body, at least one thick-film resistor 3 being applied to the substrate so that, in use, it undergoes deformations univocally corresponding to the deformations of the substrate, and circuit means (e.g. a bridge circuit) connected to the at least one resistor and arranged to output electrical signals indicative of the variations in its resistance. The substrate may be mounted in an air-tight or liquid-tight casing. A mass M1 may be fixed to the substrate.

A multi-layer printed or integrated circuit device having a multiplicity of layers 2 - 13 includes at least one signal layer 6 which embodies an electrical circuit and is disposed intermediate other layers of the device, and a multiplicity of exposed electrical terminal conductors 3 of which at least some extend through layers of the device to the signal layer. A sensing layer 8 which is conductive is disposed adjacent the signal layer, being electrically separated from the layer and any other conductive layer of the device. The sensing layer is capacitatively coupled to the signal layer and is electrically connected to a terminal 3a. The internal sensing layer takes the place of an external probe and facilitates testing of the device, particularly by a capacitative sensing method. The device and a semi conductor die 18 are mounted on a heat sink 17 and interconnected by bond wires 20.

The present invention may provide a particle or radiation detector or imager which may be used for accurate recording of medical (2-D) X-ray images. The imager includes at least one detector panel. The detector panel includes a microgap detector with an array of pixel electrodes of a novel form. Each pixel electrode is insulated from a planar cathode by means of an insulating layer. Each pixel electrode is connected to an underlying contact by means of a via hole in the insulating layer. The insulating layer is preferably conformal with the electrodes.The underlying contact is connected to an electronic measuring element which preferably lies underneath the electrode and is about the same size as the electrode. The measuring element may be a storage device, a digital counter or similar. A switching transistor is connected to the measuring device. The switching transistor may be a thin film transistor. Alternatively, both measuring element and transistor may be formed in a single crystal semiconductor, e.g. a VLSI, and a complete imager formed from several detector panels in an array.The drift electrode of the microgap detector preferably includes a photocathode. The photocathode may be directly evaporated onto a phosphor.

292,607. Electrolux, Ltd., (Assignees of Platen-Munters Refrigerating System Aktiebolag). June 23, 1927, [Convention date]. Gas analysis; diffusion apparatus for gases. - In an apparatus for indicating the composition of a gas wherein the gas is diffused through a porous member into a measuring chamber, the gas so diffused is - exposed to the action of an absorption medium having a constant absorption .capacity such as a liquid of constant composition passing in con. tinuous flow. The apparatus shown comprises a diffusion vessel formed of three discs 5- - 7 connected together in a fluid-tight manner and having formed therein a cavity 8 communicating on one side through porous partitions 10, 18 with cavities 9, 17, and on the other side through a porous partition 27 with a cavity 30. Absorptive liquid such as a solution of caustic potash is caused to flow continuously from a Marriott's bottle 3 into the cavity 9 through the partition 10, thence in a thin film over the surface of the cavity 8 and out through the partition 18 and cavity 17 to a receptacle 4. The gas to be heated is admitted to the cavity 30 through an inlet 32 and passes out through an outlet 34. The reduction of pressure caused by the absorption of constituents from the gas passing through the partition 27 into the cavity 8 is measured by the manometer device 39, 41. Ventilating salves 16, 22 are provided, for the cavities 9, 17 respectively, for the removal of air.

789,667. Electric analogue calculating systems; power and power factor measurements; semiconductor devices. SIEMENS-SCHUCKERTWERKE AKT.-GES. Sept. 21, 1954 [Sept. 21, 1953; Sept. 21, 1953; Sept. 23, 1953; Jan. 8, 1954; Jan. 29, 1954], No. 27328/54. Class 37. [Also in Groups XXXV, XXXVIII and XL (c)] Apparatus for producing from input analogue voltages or currents a corresponding analogue voltage or current of the product, quotient, or reciprocal of the input variables comprises at least one semi-conductor member responsive to a magnetic field, within which is formed a magnetic barrier layer, which has a carrier mobility of at least 6000 cm.2/volt/sec., and which is composed of a compound of constitution AIII BV ; wherein AIII is an element (boron, aluminium, gallium, or indium) of the third group of the Periodic Table and BV is an element (nitrogen, phosphorus, arsenic or antimony) of the fifth group thereof; and may particularly be indium antimonide or indium arsenide; the semi-conductor member being (a) subjected to a magnetic field dependent on a voltage or current representing a first input quantity to vary the electrical resistance thereof connected in series with a linear resistance, each resistance being traversed in opposite senses by identical currents derived from voltages or currents representing a second input quantity, So that the algebraic sum of the respective voltage drops produces an output voltage or current representing the product or quotient of the input quantities, or the reciprocal of either when the remaining quantity is held constant; or (b) subjected to a magnetic field dependent on a voltage or current representing a first input quantity, and traversed by a current dependent on a voltage or current representing a second input quantity, to generate a Hall effect voltage across such member from which is derived an output voltage or current representing the product or quotient of the input quantities, or the reciprocal of either when the remaining quantity is held constant. In Fig. 1 equal semi-conductive resistances R1, R2 as defined above and comparatively small ohmic resistances RV1, RV2 are connected in series and equal currents J2 analogous to an input quantity flow from the ends to the centre point of the resistance chain; the resistance R1 being variable in response to the magnetic field of winding W1 excited by a current J1 analogous to another input quantity. It is shown that the resultant voltage U across the ends of the semiconductive resistances R1, R2 equal to the algebraic difference between the individual voltage drops is proportional to the product of the input quantities. In Fig. 2 two identical semi-conductive resistances R1, R2 similarly connected in series with ohmic resistances RV1, RV2 and carrying equal opposed currents J2 analogous to an input quantity are subjected to magnetic fields derived from respective windings W1, W2 energized by a current J1 analogous to another input quantity, and from auxiliary windings W11, W21 energized by a current J3 derived from a constant voltage source, the source of currents J1 or J2, or the output. Connections are such that the resultant fields operating on resistances R1, R2 are respectively the difference and the sum of the fields of the individual windings; and as before the resultant voltage U across resistances R1, R2 is shown to be proportional to the product of the input quantities, compensated for deviations of linearity between the instantaneous values of R1, R2 and their controlling fields. In Fig. 3 (not shown) the respective voltages developed across two semi-conductive resistances energized in series by a first analogue current (one of which resistances is magnetically excited in response to a second analogue current) are supplied to separate control windings of a magnetic amplifier whose output is analogous to the product of the input quantities; while in Fig. 4 (not shown) the non-linear resistance sensitive to a magnetic field controlled analogously to the divisor is connected in series with an ohmic resistance and a source of voltage analogous to the dividend, to develop voltage across the ohmic resistor approximately proportional to the quotient. In Fig. 5 the dividend voltage U1, from a source having resistance Ri is connected in series with a semi-conductive resistance R1 controlled by the magnetic field of winding W1 energized by the divisor current J1, and with ohmic resistances R2, R3, R4 and RP. Voltage U2 appears across R2, and U3 across R3, which is also the load resistance of an A.C. energized magnetic amplifier MV incorporating an output RS rectifier bridge 8, whose control windings - are 2 connected in series across RP and whose rectified output current J3 is opposed in resistance R3 to the current J2 from voltage source U1. Disregarding RP and R4, if R3J3 = J2 (a + R2 + RS and R3 + Ri) where a is the resistance of R1 for zero field, and since #U = O = U1 + [a + R2 + RS + R3 + Ri + J1] + U3 and U3 = J2[a + R2 + RS + R3 + Ri]; then J2 = U1/c.J1 where c is a constant. In a modifica- tion (Fig. 6, not shown) the magnetic amplifier control windings are energized directly in series with resistances R2, R3 and R4, which may be given a temperature coefficient such as to compensate for variations with temperature of the other resistances of the network. A mathematical analysis of the compensation of the system to variations of temperature and other disturbing factors is given. The magnetic amplifiers are replaceable by semi-conductor amplifiers in the circuit of Fig. 7, which is similar to that of Fig. 5 but incorporates a resistance RS corre- RS sponding to the control windings - in series 2 with R1, across which is connected the input of a transistor T, whose output in series with a unidirectional voltage source U is connected across resistance R3 in series with RS and the output resistance R2. Non-linearity of the initial region of the resistance field curve of the member R1 may be eliminated by superimposing the constant auxiliary field of a permanent or electromagnet upon that of the control winding. Fig. 8 shows structurally a control winding W1 on a two-part gapped armature 13, 14 excited by a permanent magnet M; the variable semiconductor resistance R1 being located in the central leg of the armature and insulated therefrom by layers 15, 16 of non-conductive permanent magnet material such as ferrite. Fig. 9 shows control winding W1 wound about the central leg of an armature comprising a pot 19 and a cover 20 of magnetic material; the leg comprising non-conductive permanent magnets M1, M2 of ferrite retaining a central semiconductor disc constituting the resistance R1; the external connections being made to the centre and periphery thereof. The devices of Figs. 5-9 may be applied to operate relays in combination with magnetic or transistor amplifiers, into which a time delay factor may be introduced, for the protection of electric supply systems and machines and also to determine power; and A.C. power factor by multiplying voltage U and wattful current J cos # and dividing the product by the product of the rectified values of voltage and current U and J. The devices are also applicable to determination of the running diameter of a take-up reel as the quotient of the speed of movement of the wound material and the speed of the reel, determined as voltages derived from tachometer generators; the quotient voltage being applicable to control of the winding tension. Quotients, reciprocals, and products are also determinable utilizing semi-conductors exhibiting the Hall effect, e.g. plate 62 (Fig. 10) of indium antimonide or arsenide perpendicular to the magnetic field of an armature winding 61 excited by a current J1 due to a voltage U1 (proportional e.g. to that across a motor), the plate passing a vertical current J2 due to a voltage U2 (proportional e.g. to the motor load current). A voltage appearing across horizontal electrodes 63, 64 of the plate is proportional to the product U1, U2 (or e.g. the motor power) and is amplified for indication. Resistances R1, R2 in series with constant voltages may be varied in proportion to factors to be multiplied. The wound armature 61 is replaceable by a permanent magnet whose field is either constant or mechanically variable in response to a required factor. Fig. 11 shows a device for determining a reciprocal value of a factor represented by a voltage U energizing with current J the magnetic field windings 101, 102 whose flux intersects a semiconductive resistance member 103 of indium arsenide or antimonide having Hall voltage electrodes 104, 105 developing voltage U connected to the input of an e.g. magnetic amplifier 107 through an opposing comparison voltage source 106; the amplified output producing a current through a resistance 109 in series with the semi-conductive member 103. It is shown that the amplifier output current represents the reciprocal of the input voltage U. The magnetic flux may be varied mechanically in response to the input factor. Fig. 12 shows a similar device wherein the amplifier 107 excites the magnetic field windings 101, 102 and the input voltage U in series with resistance 116 passes current J through the semi-conductive resistance 103 whose electrodes 104, 105 develop a Hall voltage which excites a bridge circuit comprising linear resistances 112, 113 in combination with compensating non-linear resistances 114, 115, whose unbalance voltage energizes the amplifier input. The output current is shown to represent the reciprocal of the input factor. Fig. 13 shows a device for determining a quotient wherein an 1 1 amplified output current - proportional to - in J U the magnetic field windings 101, 102 of the device shown in Fig. 11 represents the reciprocal of a first input factor and passes not only through semi-conductive Hall resistance 103

118,882. Parnacott, A. E. Sept. 12, 1917. Viscosimeters. - Apparatus for detecting leakages of air or for measuring the viscosity of liquids comprises a capillary space between a surface and a transparent plate, a thin film of liquid in the space, and means for admitting air or gas to the space. In the form shown in Fig. 1, for detecting leakage through sparking-plugs, the transparent plate c rests on a surface b of a member a connected to a tube j having a collar for a washer to make a sealed joint with the plug or plug-carrying member. In a viscosity meter, a film f<1>, Fig. 4, of the liquid to be tested is disposed between a transparent plate c' and the bottom of a jacketed cup a', variable air pressures being exerted on the film by varying the immersion of a calibrated tube j<1> in a vessel k. In a modification, the pressures are produced by a hand-pump, and the viscosity is indicated by a pressure gauge.

or Ga-modified SiO2 or GeO2 having a porous crystalline structure and specific surface area >150m2/g has the general formula si(0.0012-0.0050)Al.Oy; Ge(0.0012-0.0050) Al.Oy; Si(0.0012-0.0050)Ga. Oy%Ge (0.0012-0.0050)Ga. Oy; where y = 2.0018-2.0075. A zeolite has the general formula (0.9 plus-or-minus 0.2)M2/n 0.W2O3. (5-100)YO2.zH2O, where M = cation H+ and/or NH4 + and/or metallic cations and/or cations derived from amino alcohols; n = valency of cations; W = Al or Ga; Y = Si or Ge; z = 0-40. The modified SiO2 or GeO2 is prepd. by (a) reacting a deriv. of Si or Ge and a derivative of Al or Ga with a substance having an archivolt or clathrating effect, in an aq., alcoholic or aq. alcoholic medium, (b) crystallising reaction mixt. at 100-220 degrees C (c) cooling, (d) sepg the ppte and (e) firing the ppte, in air at 300-700 degrees C. The modified SiO2 GeO2 or the zeolite is used as catalyst for alkylation of hydrocarbon, pref 4C to high octane hydrocarbon. Regenerable catalysts give high conversion rates for alkylation (100%) and for conversion of CO and propylene in automobile exhausts (99%). Acidity of the modified SiO2 and GeO2 can be tailored for a desired application. The materials are also useful adsorbents.