1,045,846. Semi-conductor devices. SIEMENS & HALSKE A.G. Sept. 28, 1965 [Sept. 29, 1964], No. 41103/65. Heading H1K. [Also in Divisions G1 and H4] An overload protection device is provided for a transducer suitable for use in a microphone and which is of the type having a pressure-transmitting stylus bearing on a semiconductor member such as a PN junctioncontaining piezo-resistive body. This body is mounted on an electrode plate which in the non-loaded transducer is held against an adjustable limit stop by a spring opposing pressure applied by the stylus. When the load on the stylus exceeds the rest pressure in the spring the latter yields to reduce the stress on the semi-conductor. The region of contact between the stylus and semi-conductor may be surrounded by a viscous medium to lessen the rebound impact if the stylus should lift momentarily from the semi-conductor. The mass of the semi-conductor and electrodes is made small so that the inertia forces on acceleration are preferably less than 10% of the rest force in the spring.

1,116,418. Component testing. MICRO TECH MFG. Inc. April 20, 1966 [April 21, 1965], No. 17231/66. Heading G1U. A device for successively testing a number of dice formed on a semi-conductor wafer comprises a means for moving the wafer beneath a test probe so that the probe successively tests each die (e.g. for open and short circuit) and a record card which is moved beneath a punch in synchronism with the movement of the wafer. Detection of a faulty element on the wafer results in the generation of a signal which actuates the punch to record a fault in a position on the record card corresponding to the position of the element on the wafer.

1,236,385. Semi-conductor strain gauges. PLESSEY CO. Ltd. 13 Sept., 1968 [14 Sept., 1967], No.42027/67. Heading H1K. A semi-conductor substrate providing the sensitive element of a strain gauge also has as an integral part thereof an integrated circuit for amplifying the output from the element or for indicating whether the strain on the element is above or below a predetermined level. In the former case the circuit comprises an amplifier using MOS or bipolar transistors and in the latter case it comprises a Schmitt trigger circuit. The substrate may be of Si and may be selfsupporting or mounted on a fibreglass support. The sensitive element may comprise the entire substrate or may consist of a diffused resistor region therein.

A shielding plate is made of a conductive material connected to a ground. The shielding plate is arranged between a photo timer for measuring an amount of the radiation and a radiation-sensitive semiconductor thick film over an entire surface of an effective area for X-ray detection. The shielding plate shields a radiation noise from the photo timer, and thus the radiation noise can be released by connecting the shielding plate to the ground. As a result, the radiation noise from the photo timer which has influence on the radiation detector can be reduced.

PURPOSE: A method for measuring thickness or a surface shape is provided to reduce the time for determining the thickness of the thin film layer by comparing simulation interferential signals corresponding to expected thickness with real interferential signals. CONSTITUTION: Simulation interferential signals are prepared on each thickness by simulation of interference signals on a sample thin film layer. A white light is emitted on the thin film layer. A real interferential signal is obtained(S120). Plural expected thicknesses are prepared from the real interferential signals(S139). The real interferential signal is compared with the simulation interferential signal(S140). The thickness of the simulation interferential signals which are in accord with the real interferential signals is determined as the thickness of the thin film layer(S150).

PROBLEM TO BE SOLVED: To grasp each phenomenon by providing a phenomenon detection part to detect the physical phenomenon and/or chemical phenomenon to fetch the electric signal of a plurality of physical phenomena and/or chemical phenomena on one side of a semi-conductor substrate in an approximately simultaneous manner. SOLUTION: A phenomenon detection device body 1 is installed in the solution, and a reference electrode 16 is immersed in the solution to determine its electric potential. A silicon substrate 2 is grounded, and a depletion layer 23 dependent on the voltage to be applied to the electrode 16 and the pH concentration of the solution is expanded below a sensing part 7 of the substrate 2. When the light is made incident on an upper surface of the silicon substrate 2 and the light enters the depletion layer 23, a pair of electron and hole are generated, the hole is discharged out of the substrate 2 while the electron is accumulated in the depletion layer 23. Before the electrons accumulated in the depletion layer 23 flows into a diffusion area 4, the positive voltage is applied to a set gate 9, and fixed to the initial electric potential, and the positive voltage is applied to a read electrode 8 to change the electric potential of the area 4, and the intensity of the light can be detected by reading the electric potential by a source follower circuit 10.

In an apparatus for the measurement of electrical power, including a multiplier which receives on an input thereof an electrical signal proportional to the voltage component of the electrical power, and which is subjected to an external magnetic field proportional to the current component of the electrical power, an auxiliary magnetic field is applied to the multiplier. The multiplier is a Wheatstone bridge including four ferromagnetic and magnetoresistive thin films, and the magnetic fields have a direction along the direction of the hard magnetic axes of each of the thin films. The thin films are so positioned that the magnetization of two electrically oppositely disposed thin films resulting from the application of the external magnetic field thereto is rotated in a direction opposite to that of the correspondingly resulting magnetization of the remaining thin films, following application of the auxiliary magnetic field to the films.

869,710. Semi-conductor devices. UNICAM INSTRUMENTS Ltd. Jan. 19, 1960 [Jan. 27, 1959], No. 2978/59. Class 37. A radiation detector has a first electricallyconducting radiationabsorbing film spaced by an insulating sheet from a second electrically-conducting film forming part of a thermocouple or bolometer. Fig. 1 shows a thermocouple which consists of a gold film 4 in contact with welded joints 6, 7 of thermoelectric material and supported by a thin insulating sheet 2. On the other side of the insulating sheet is a radiation-absorbing film of aluminium, gold, nickel, bismuth, selenium or tellurium. The separation of the absorbing film from the thermocouple proper enables the film to have a surface roughness appropriate to the wavelength of the radiation to be absorbed without its thickness, which necessarily becomes large in the case of long wavelengths, affecting the thermal capacity of the thermocouple. Fig. 3 shows a bolometer in which the radiationabsorbing element is a film 13 of gold or nickel evaporated on to a collodion or Formvar (Registered Trade Mark) support. The resistive film 14 on the other side of the insulating support is connected to wire 16 by electrodes 15 formed by metal deposits.