A system (1) for measuring a curved surface of a transparent or translucent material comprises a surface treatment device (10), a three-dimensional measurement device (20) and a second conveyance device. The surface treatment device (10) is used to frost or mist a surface of a transparent or translucent material to form a frosted or foggy surface, that is, frost or fog is uniformly formed on the surface of the transparent or translucent material. The three-dimensional measurement device (20) is used to perform three-dimensional measurement of the frosted or foggy surface of the transparent or translucent material to obtain measured data. The second conveyance device is used to convey the material with the frosted or foggy surface to the three-dimensional measurement device (20). L'invention concerne un système (1) permettant de mesurer une surface incurvée d'un matériau transparent ou translucide comprenant un dispositif de traitement de surface (10), un dispositif de mesure tridimensionnelle (20) et un second dispositif de transport. Le dispositif de traitement de surface (10) est utilisé pour givrer ou embuer une surface d'un matériau transparent ou translucide afin de former une surface givrée ou embuée, c'est-à-dire que le givre ou la buée sont uniformément formées sur la surface du matériau transparent ou translucide. Le dispositif de mesure tridimensionnelle (20) est utilisé pour effectuer une mesure tridimensionnelle de la surface givrée ou embuée du matériau transparent ou translucide afin d'obtenir des données mesurées. Le second dispositif de transport est utilisé pour transporter le matériau à surface givrée ou embuée vers le dispositif de mesure tridimensionnelle (20). 一种用于透明或半透明材料曲面的测量系统（1），包括：表面处理装置（10）、三维测量装置（20）和第二传送装置；表面处理装置（10）用于对透明或半透明材料的表面进行霜化或雾化，形成霜化或雾化表面，即在透明或半透明材料的表面形成均匀的霜或雾；三维测量装置（20）用于对霜化或雾化后的透明或半透明材料的表面进行三维测量，从而获取测量数据；第二传送装置用于将表面霜化或雾化后的材料传送到三维测量装置（20）。

The fibre-optic measurement system comprises at least one body in a sensor part (1) connected optically to at least one optic fibre. The body (4) is set in mechanical oscillation by optic excitation through the fibre (2), the oscillation having a frequency related to the deposed or absorbed mass, and being optically detectable through the fibre (2). The body (4) contains an integrated unit composed of at least one piezo-electric material and at least one opto-electrical converter, e.g. a semi-conductor. It also contains at least one absorbent layer, and the opto-electrical converter comprises a pn transition stage composed of semi-conductors with different energy band gaps. The piezo-electric material occupies at most half the thickness of the body (4). (Provisional Basic advised week 84/48) .

Provided are a programmable mask for promptly fabricating a biomolecule or polymer array having high density, an apparatus for fabricating a biomolecule or polymer array including the mask, and a method of fabricating a biomolecule or polymer array using the programmable mask. The programmable mask for fabricating a biomolecule array or polymer array includes a first substrate including a black matrix having openings and first pixel electrodes; a second substrate including thin film transistors for switching pixel regions which correspond to the openings according to applied electric signals and second pixel electrodes connected to drain electrodes of the thin film transistors; a liquid crystal layer interposed between the first substrate and the second substrate, the liquid crystal layer including liquid crystal whose arrangement can be changed according to electric signals of the thin film transistors so as to selectively transmit light; a first polarizing plate laminated on one side of the first substrate; a second polarizing plate laminated on one side of the second substrate; and a lens array layer laminated on one side of the second polarizing plate including lenses which correspond to the pixel regions.

Provided are a programmable mask for promptly fabricating a biomolecule or polymer array having high density, an apparatus for fabricating a biomolecule or polymer array including the mask, and a method of fabricating a biomolecule or polymer array using the programmable mask. The programmable mask for fabricating a biomolecule array or polymer array includes a first substrate including a black matrix having openings and first pixel electrodes; a second substrate including thin film transistors for switching pixel regions which correspond to the openings according to applied electric signals and second pixel electrodes connected to drain electrodes of the thin film transistors; a liquid crystal layer interposed between the first substrate and the second substrate, the liquid crystal layer including liquid crystal whose arrangement can be changed according to electric signals of the thin film transistors so as to selectively transmit light; a first polarizing plate laminated on one side of the first substrate; a second polarizing plate laminated on one side of the second substrate; and a lens array layer laminated on one side of the second polarizing plate including lenses which correspond to the pixel regions.

Provided are a programmable mask for promptly fabricating a biomolecule or polymer array having high density, an apparatus for fabricating a biomolecule or polymer array including the mask, and a method of fabricating a biomolecule or polymer array using the programmable mask. The programmable mask for fabricating a biomolecule array or polymer array includes a first substrate (410) including a black matrix (430) having openings and first pixel electrodes; a second substrate (400) including thin film transistors for switching pixel regions which correspond to the openings according to applied electric signals and second pixel electrodes connected to drain electrodes of the thin film transistors; a liquid crystal layer (420) interposed between the first substrate (410) and the second substrate (400), the liquid crystal layer including liquid crystal whose arrangement can be changed according to electric signals of the thin film transistors so as to selectively transmit light; a first polarizing plate (445) laminated on one side of the first substrate (410); a second polarizing plate (440) laminated on one side of the second substrate (400); and a lens array layer (450) laminated on one side of the second polarizing plate (440) including lenses which correspond to the pixel regions.

A pore- or particle-size distribution measurement apparatus capable of measuring the size of a pore or a particle in a short time with high accuracy, is provided. When the size of a pore (Y) existing in a porous insulator film ( 3 ) or the size of a particle in a thin film is measured, a specimen ( 5 ) having the insulator film ( 3 ) formed on the surface of a substrate ( 4 ) is irradiated, from the surface side thereof, with X-rays R at a specified incident angle thetai larger than the total reflection critical angle of the insulator film ( 3 ) but not exceeding 1.3 times the total reflection critical angle of the substrate ( 4 ). In the irradiated X-rays, among components exiting from the insulator film ( 3 ) without entering the pore (Y) and scattering of reflection component of the X-rays reflected on the surface of the substrate ( 4 ) after having entered the insulator film ( 3 ), the scattered component whose exit angle is larger than that of a component of the reflection component which exits from the insulator film ( 3 ) without entering the pore (Y) is detected.

PURPOSE:To allow inspection of defective pixel for a poly-crystalline silicon thin film transistor(TFT) array substrate prior to liquid crystal injection process by providing an image processor for detecting the defective pixel. CONSTITUTION:Detection signals being arranged in time series by means of an analog multiplexer 5 are sampled and held in the vicinity of maximum level thereof by a sample & hold circuit 6 according to clock signals generated from a timing generator 1. The holding time is set equal to the clock period of the clock signal. An analog waveform having microdifference of height at the output end of the circuit 6 is sliced by a slicing circuit 7 according to a cutback timing pattern before being fed to a variable gain amplifier circuit 8. The amplified signal is subjected to A/D conversion 9 and fed to an image processor 10 where the average value of charge data is calculated for the pixels of a single data line followed by calculation of the difference from the data.

858,199. Diode gating circuits. MARCONI'S WIRELESS & TELEGRAPH CO. Ltd. April 9, 1959 [July 17, 1958], No. 23027/58. Class 40(6). Fig. 2 shows a coincidence detector for producing an output on lead 10 only when positive going input signals are present simultaneously at leads 1, 2 and for preventing a noise signal being produced at the output simulating a useful signal even when the two inputs are not simultaneously present. The input signals at 1, 2 are applied to an AND gate comprising semiconductor diodes 4, 5 and also to an OR gate comprising diodes 11, 12 to produce signals at points 3, 13 which are applied to a differential circuit 14 which produces an output to operate relay device 15 when there is a difference in amplitude between the input signals. Since the AND circuit produces an output which is approximately equal to the smaller of its two input signals if large useful signals are present simultaneously at inputs 1, 2 the signals at 3, 13 are of equal amplitude so that no output signal is produced from differential circuit 14 and relay 15 does not operate. If a large signal is present at only one of the inputs 1, 2 the signal at 13 will be very much greater than the signal at 3 so that the differential circuit 14 will actuate relay contact 15 to insert attenuation in the output signal path 10. The delay device 18 and the pulse widening circuit 19 compensate for delay in circuit 14 and thus prevent any noise signal getting to the output 10 even for a short period of time. In the modification shown in Fig. 3 the differential circuit 14 is constituted by a long-tailed pair comprising triodes 14a, 14b the output from which controls electronic switch comprises semi-conductor diodes 15a, 15b which are normally biased by resistor 22 and diode 23. The switch is in the input lead to cathode follower 8 from which the output lead 10 is fed. Resistors 20, 21 attenuate signals supplied via 13 to the valve 14a to ensure that with signal and noise simultaneously at terminals 1, 2 the noise levels at the grids of tubes 14a, 14b are substantially the same and the signal at the grid of valve tube 14b is little more than at the grid of 14a attentuation is thus not inserted in the path of output lead 10. If there is no signal at one of the input terminals I or 2 the output from the long-tailed pair 14a, 14b causes attenuation to be inserted.