The present invention may provide a particle or radiation detector or imager which may be used for accurate recording of medical (2-D) X-ray images. The imager includes at least one detector panel. The detector panel includes a microgap detector with an array of pixel electrodes of a novel form. Each pixel electrode is insulated from a planar cathode by means of an insulating layer. Each pixel electrode is connected to an underlying contact by means of a via hole in the insulating layer. The insulating layer is preferably conformal with the electrodes.The underlying contact is connected to an electronic measuring element which preferably lies underneath the electrode and is about the same size as the electrode. The measuring element may be a storage device, a digital counter or similar. A switching transistor is connected to the measuring device. The switching transistor may be a thin film transistor. Alternatively, both measuring element and transistor may be formed in a single crystal semiconductor, e.g. a VLSI, and a complete imager formed from several detector panels in an array.The drift electrode of the microgap detector preferably includes a photocathode. The photocathode may be directly evaporated onto a phosphor.

292,607. Electrolux, Ltd., (Assignees of Platen-Munters Refrigerating System Aktiebolag). June 23, 1927, [Convention date]. Gas analysis; diffusion apparatus for gases. - In an apparatus for indicating the composition of a gas wherein the gas is diffused through a porous member into a measuring chamber, the gas so diffused is - exposed to the action of an absorption medium having a constant absorption .capacity such as a liquid of constant composition passing in con. tinuous flow. The apparatus shown comprises a diffusion vessel formed of three discs 5- - 7 connected together in a fluid-tight manner and having formed therein a cavity 8 communicating on one side through porous partitions 10, 18 with cavities 9, 17, and on the other side through a porous partition 27 with a cavity 30. Absorptive liquid such as a solution of caustic potash is caused to flow continuously from a Marriott's bottle 3 into the cavity 9 through the partition 10, thence in a thin film over the surface of the cavity 8 and out through the partition 18 and cavity 17 to a receptacle 4. The gas to be heated is admitted to the cavity 30 through an inlet 32 and passes out through an outlet 34. The reduction of pressure caused by the absorption of constituents from the gas passing through the partition 27 into the cavity 8 is measured by the manometer device 39, 41. Ventilating salves 16, 22 are provided, for the cavities 9, 17 respectively, for the removal of air.

A multi-layer printed or integrated circuit device having a multiplicity of layers 2 - 13 includes at least one signal layer 6 which embodies an electrical circuit and is disposed intermediate other layers of the device, and a multiplicity of exposed electrical terminal conductors 3 of which at least some extend through layers of the device to the signal layer. A sensing layer 8 which is conductive is disposed adjacent the signal layer, being electrically separated from the layer and any other conductive layer of the device. The sensing layer is capacitatively coupled to the signal layer and is electrically connected to a terminal 3a. The internal sensing layer takes the place of an external probe and facilitates testing of the device, particularly by a capacitative sensing method. The device and a semi conductor die 18 are mounted on a heat sink 17 and interconnected by bond wires 20.

An acceleration or vibration sensing device comprises a support structure for fixing to the body 1 the acceleration or vibrations of which it is desired to measure, and including a substrate 2 which is resiliently deformable through the effect of an acceleration of the body, at least one thick-film resistor 3 being applied to the substrate so that, in use, it undergoes deformations univocally corresponding to the deformations of the substrate, and circuit means (e.g. a bridge circuit) connected to the at least one resistor and arranged to output electrical signals indicative of the variations in its resistance. The substrate may be mounted in an air-tight or liquid-tight casing. A mass M1 may be fixed to the substrate.

PROBLEM TO BE SOLVED: To provide a light or radiation detecting device which reduces discharging due to a bias voltage applied to a light or radiation sensitive film. SOLUTION: A semiconductor thick film 1 in an external region A is formed of a polycrystalline semiconductor thick film 1A and a semiconductor thick film 1 in an internal area B is formed of an amorphous semiconductor thick film 1B, so the discharging caused by the bias voltage can be suppressed, so that such malfunction that a detection signal is detected even when no radiation is made incident hardly occurs. Further, the discharging is caused at the peripheral edge part of a voltage application electrode 3, so a device regarding this invention can easily be formed only by forming the polycrystalline semiconductor thick film 1A in the external region A.

PURPOSE:To clearly measure the recording state of a vertical magnetic recording medium by using a cantilever consisting of a probe and a leaf spring where a hard magnetic thin film is formed at the tip as the cantilever for magnetic force microscope. CONSTITUTION:A stainless steel foil 1 is machined in the shape of a leaf spring 2 and then a probe 3 is adhered to the tip of the leaf spring 2. In the probe 3, iron/cobalt alloy thin film 5 is formed on the surface of an iron probe 4 which is machined in needle shape by performing electrolytic polishing of iron wire by the electrolytic plating method. The iron/cobalt alloy is a hard magnetic material and has a large coercive force so that the direction of magnetization of the probe 3 is constantly maintained to be fixed and attraction and repulsion operate according to sample magnetization direction for the probe 3 when the sample 3 is brought closer to the sample surface and scans the sample surface in parallel. When the probe 3 is moved slightly up and down by a piezoelectric element and scans the sample surface in parallel in this state, the probe 3 is controlled in upper position when the magnetization is in the same direction. On the other hand, when the magnetization is in opposite direction, the probe 3 is controlled in lower position. It is changed into an image, thus measuring the magnetization distribution of the sample.

PROBLEM TO BE SOLVED: To quickly perform failure countermeasures when performing inspection or failure analysis of a manufacturing process of a semiconductor wafer or a thin film substrate. SOLUTION: In this foreign matter or defect inspecting device inspecting by an optical system the size of the foreign matter or defect is associated with a failure cause in its result, the failure cause is designated by a data processing means from statistics of results of inspections, and result information of the inspections is displayed. Thresholds of failures per areas in the semiconductor wafer or the like are set and foreign matter is statistically evaluated for performing the failure analysis.

937,456. Semi-conductor devices. GENERAL MILLS Inc. Dec. 8, 1959 [Dec 8, 1958] No. 41736/59. Class-37. [Also in Group XL (b)] A photosensor device for use in measuring light intensity comprises a grain boundary between two differently orientated single crystals. The boundary is equivalent to a series of edge dislocations which trap electrons and holes in N and P-type materials, respectively, so that the boundary attains a net negative or positive charge. If a voltage pulse of either polarity is applied between soldered contacts on the two crystals the boundary charges up to the pulse voltage and a space charge layer forms on both sides of the boundary. On removing the pulse the charge remains so that on application of a further pulse of the same magnitude only a small capacitive current pulse flows into the device which flows out again on removal of the pulse. If, prior to the second pulse, some of the charge is released from the boundary by photon bombardment the pulse restores the original boundary charge and charges up the associated capacitance. The charging current therefore is a measure of the total number of photons incident on the device between the pulses provided this is insufficient to completely discharge the boundary. Circuit arrangements for measuring the charging current and thus the light intensity are described (see Group XL (b)). Since the capacity of the device is proportional to the reciprocal of the square root of the barrier voltage the integrated light intensity may alternatively be measured continuously in terms of the charge of capacitance of the device between pulses (see also Group XL (b)). To facilitate use in such circuits as indium contact is provided to the edge of the grain boundary. Silicon is suitable for use in photosensors operated at room temperature, germanium for use at liquid nitrogen temperatures and indium antimonide at lower temperatures. The use of other A III By compounds and silicon carbide is also contemplated. A matrix 86 of 25 cells (Fig. 8) is formed from a plate 94 of semi-conductor material with a grain boundary 88 between its faces by cutting perpendicular sets 90, 92 of parallel grooves through the grain boundary from opposite sides of the plate.