PURPOSE:To obtain high insulation property without spoiling heat conductivity and to take an accurate measurement even when the body to be measured is energized by coating the tip part of a contactor with a thin film of diamond. CONSTITUTION:The contactor 1 consists of a protective pipe 4 which projects to a probe 3 and a sensor 5 such as a thermocouple stored in the pipe. Then the diamond thin-film coating layer 2 is formed at the tip part of the sensor 5 which faces the tip of the protective pipe 4, the outer peripheral surface nearby it, and the opening end of the protective pipe 4. When the tip of the sensor 5 projects from the pipe 4, the coating layer 2 is formed only at the tip. The coating layer 2 is formed by a plasma CVD method, etc., and when the voltage of the body to be measured is 200V, thickness of about 10mum is enough. This thickness is made preferably as thin as possible so as to reduce the difference from the part to be measured. The inherent resistance of the diamond thin film 2 is 10<16>OMEGAcm, so the electric insulation is sufficiently high and the heat conductivity is about 5 times as large as that of copper and sufficiently large.

The present application describes an electronically powered postage stamp or mailing label and including a radio frequency identification (RFID) device and system mounted between the opposing and facing major surfaces thereof. The RFID device and system includes an integrated circuit transceiver chip which is connected to and powered by a thin flat battery cell and is operated with a thin film RF antenna, all of which are mounted in side-by-side relationship on a thin base or support layer. These thin flat components are mounted in an essentially two dimensional planar configuration well suited for incorporation into the planar structure of a postage stamp or a mailing label. In addition, the RFID transceiver chip may be replaced with an electro-optically operated IC chip using, for example, LEDs or laser diodes for the propagation of light signals to an interrogator.

The present application describes an electronically powered postage stamp or mailing label and including a radio frequency identification (RFID) device and system mounted between the opposing and facing major surfaces thereof. The RFID device and system includes an integrated circuit transceiver chip which is connected to and powered by a thin flat battery cell and is operated with a thin film RF antenna, all of which are mounted in side-by-side relationship on a thin base or support layer. These thin flat components are mounted in an essentially two dimensional planar configuration well suited for incorporation into the planar structure of a postage stamp or a mailing label. In addition, the RFID transceiver chip may be replaced with an electro-optically operated IC chip using, for example, LEDs or laser diodes for the propagation of light signals to an interrogator.

1,007,031. Semi-conductor devices. HONEYWELL Inc. March 30, 1962 [April 3, 1961], No. 12394/62. Drawings to Specification. Heading H1K. An element for a semi-conductor strain gauge comprises a crystal of high resistivity semi-conductor having a surface layer thereon highly doped with an N or P-type impurity substance, the surface layer thus having a comparatively low resistivity and having ohmic electrodes attached thereto at points remote from one another. Silicon, germanium, and other semi-conductors such as the intermetallic compounds may be used. Suitable doping agents include phosphorus, arsenic, antimony, aluminium, gallium, indium or boron. The surface layer may be provided by vapour diffusion techniques or, less desirably, by the direct alloying of electroplated or vacuum deposited films. The production of the particular embodiment starts with a silicon filament having a resistivity greater than 10 ohm. cm. and which is cut so as to have the (111) axis along the filament and so as to have a substantially square cross-section. After polishing the surface with a chemical etch, such as 1: 1 :1 H 2 O/HF/HNO 3 containing 1% by weight of silver nitrate, boron is diffused into the surface using known inert carrier gas techniques. To complete the element electrical contacts are made to the surface layer using an electroless nickel bath.

A vegetable or fruit sugar content measuring instrument comprises: a measuring electrode unit (10), comprising two measuring electrodes (11) capable of being inserted into a vegetable or fruit to be tested, wherein one end of one of the two measuring electrodes (11) is connected to one end of the other one of the two measuring electrodes (11); a resistor measuring circuit (20), connected to the measuring electrode unit (10), and configured to measure a resistor Rx between the two measuring electrodes (11); and a processor (30), connected to the resistor measuring circuit (20), and configured to determine, according to the resistor Rx between the two measuring electrodes (11), sugar content of the vegetable or fruit to be tested, and generate information indicative of the sugar content. L'invention concerne un instrument de mesure de teneur en sucre de légume ou fruit, qui comprend : une unité d'électrode de mesure (10), comprenant deux électrodes de mesure (11) pouvant être insérées dans un légume ou fruit à tester, une première extrémité de l'une des deux électrodes de mesure (11) étant reliée à une première extrémité de l'autre des deux électrodes de mesure (11) ; un circuit de mesure de résistance (20), relié à l'unité d'électrode de mesure (10) et configuré pour mesurer une résistance Rx entre les deux électrodes de mesure (11) ; et un processeur (30), relié au circuit de mesure de résistance (20) et configuré pour déterminer, en fonction de la résistance Rx entre les deux électrodes de mesure (11), la teneur en sucre du légume ou fruit à tester, et générer des informations indiquant la teneur en sucre. 一种果蔬含糖量检测器，包括：测量电极单元（10），具有能够插入待测果蔬的两测量电极（11），所述两测量电极（11）中一个的一端与另一个的一端相连；电阻检测电路（20），与所述测量电极单元（10）连接，用于检测两测量电极（11）之间的电阻Rx；以及处理器（30），与所述电阻检测电路（20）连接，用于根据所述两测量电极（11）之间的电阻Rx，确定所述待测果蔬的含糖量，并生成含糖量提示信息。

1,199,254. Thermocouples. UNITED KING- DOM ATOMIC ENERGY AUTHORITY. 25 Aug., 1967 [12 Sept., 1966], No. 40729/66. Heading H1K [Also in Division B3] The connections between adjacent elements of a thermoelectric module consisting of an array of bismuth telluride based semi-conductor bodies are made by an alloying technique in which gold or silver members are applied to the ends of a pair of such bodies under pressure at a temperature below the melting point of either the metal or the semi-conductor. The pairs of a complete module may be inter-oonnected sequentially or simultaneously, preferably by use of a heated presser foot, Fig. 2 (not shown). Preferred materials for the semi-conductor are Bi 2 Te 3 , Bi 2 Te 3 with Bi 2 Se 3 , or Bi 2 Te 3 with Sb 2 Te 3 . In forming a module of which the elements are encased in insulant, the insulant may be undercut around the edges of the semi-conductor body ends to be contacted so that molten insulant does not contaminate the alloy bond.

In an apparatus for the measurement of electrical power, including a multiplier which receives on an input thereof an electrical signal proportional to the voltage component of the electrical power, and which is subjected to an external magnetic field proportional to the current component of the electrical power, an auxiliary magnetic field is applied to the multiplier. The multiplier is a Wheatstone bridge including four ferromagnetic and magnetoresistive thin films, and the magnetic fields have a direction along the direction of the hard magnetic axes of each of the thin films. The thin films are so positioned that the magnetization of two electrically oppositely disposed thin films resulting from the application of the external magnetic field thereto is rotated in a direction opposite to that of the correspondingly resulting magnetization of the remaining thin films, following application of the auxiliary magnetic field to the films.