1,045,846. Semi-conductor devices. SIEMENS & HALSKE A.G. Sept. 28, 1965 [Sept. 29, 1964], No. 41103/65. Heading H1K. [Also in Divisions G1 and H4] An overload protection device is provided for a transducer suitable for use in a microphone and which is of the type having a pressure-transmitting stylus bearing on a semiconductor member such as a PN junctioncontaining piezo-resistive body. This body is mounted on an electrode plate which in the non-loaded transducer is held against an adjustable limit stop by a spring opposing pressure applied by the stylus. When the load on the stylus exceeds the rest pressure in the spring the latter yields to reduce the stress on the semi-conductor. The region of contact between the stylus and semi-conductor may be surrounded by a viscous medium to lessen the rebound impact if the stylus should lift momentarily from the semi-conductor. The mass of the semi-conductor and electrodes is made small so that the inertia forces on acceleration are preferably less than 10% of the rest force in the spring.

In an apparatus for the measurement of electrical power, including a multiplier which receives on an input thereof an electrical signal proportional to the voltage component of the electrical power, and which is subjected to an external magnetic field proportional to the current component of the electrical power, an auxiliary magnetic field is applied to the multiplier. The multiplier is a Wheatstone bridge including four ferromagnetic and magnetoresistive thin films, and the magnetic fields have a direction along the direction of the hard magnetic axes of each of the thin films. The thin films are so positioned that the magnetization of two electrically oppositely disposed thin films resulting from the application of the external magnetic field thereto is rotated in a direction opposite to that of the correspondingly resulting magnetization of the remaining thin films, following application of the auxiliary magnetic field to the films.

869,710. Semi-conductor devices. UNICAM INSTRUMENTS Ltd. Jan. 19, 1960 [Jan. 27, 1959], No. 2978/59. Class 37. A radiation detector has a first electricallyconducting radiationabsorbing film spaced by an insulating sheet from a second electrically-conducting film forming part of a thermocouple or bolometer. Fig. 1 shows a thermocouple which consists of a gold film 4 in contact with welded joints 6, 7 of thermoelectric material and supported by a thin insulating sheet 2. On the other side of the insulating sheet is a radiation-absorbing film of aluminium, gold, nickel, bismuth, selenium or tellurium. The separation of the absorbing film from the thermocouple proper enables the film to have a surface roughness appropriate to the wavelength of the radiation to be absorbed without its thickness, which necessarily becomes large in the case of long wavelengths, affecting the thermal capacity of the thermocouple. Fig. 3 shows a bolometer in which the radiationabsorbing element is a film 13 of gold or nickel evaporated on to a collodion or Formvar (Registered Trade Mark) support. The resistive film 14 on the other side of the insulating support is connected to wire 16 by electrodes 15 formed by metal deposits.

1,269,634. Semi-conductor devices. NATIONAL RESEARCH DEVELOPMENT CORP. 10 June, 1969 [12 June, 1968], No. 28027/68. Heading H1K. A radiation detector comprises a slab of semi-conductor material having a PIN structure and having slots dividing opposite major faces into parallel ribs, the ribs on one face extending transverse to those on the other face, each slot extending to such a depth that it intersects the junction between the respective P- or N- type region and the I-type region. As shown, Fig. 1, a wafer 1 of P-type Ge doped with Ga has a series of parallel slots 5 sawn in one face to form ribs 3 and is etched and ultrasonically cleaned to remove damaged material. A lithium-in-oil suspension is applied to the unslotted face of the wafer which is then heated to diffuse-in the lithium to form an N- type region with an N+ -type surface layer. The PN junction formed is reverse biased to cause the lithium ions to drift-in to form an I- type region 6 between the P- and N-type regions. Slots 4 extending at right angles to the slots 5 are then sawn in the upper face of the wafer to form ribs 2. The wafer is then etched and quenched in an aqueous solution of CaCl 2 , these steps being performed in such a manner that both sides of the wafer are exposed to the fluids. This may be achieved by using a stoppered funnel, Fig. 3 (not shown), or by supporting and rotating the wafer in the etch by means of a nylon clamp engaging the edges of the wafer. The wafer is then given a known clean-up drift. The ribs 2 and 3 are contacted by applying an In-Ga eutectic to the surfaces and pressing on to each face a flexible insulating base, e.g. of fibreglass or plastics material, carrying goldplated contact strips tinned with indium. The In-Ga euteetic alloys to the P-type ribs 3 to provide a low-resistance P-type surface layer. The process steps are controlled so that the sets of grooves 4, 5 intersect the NI and PI junctions respectively, to form an array of PIN diodes with co-ordinate connections. A gamma-ray camera. Fig. 2 (not shown), comprises a PIN diode array mounted with its lower face ribs (3) in thermal contact with a. plate (13) cooled by liquid nitrogen. A bias supply is connected via resistors. (8, 9) to the ribs (2, 3) so that the diodes are reverse biased. A gamma-ray source is viewed through a parallel hole collimator (7) the holes of which are aligned with the diodes of the array. Incidence of a gamma ray on a diode produces pulses at those electrodes. connected to the two ribs the intersection of which defines the diode. These output pulses are amplified and applied to a logic circuit which provides an output indicating the position of the point of the array on which the gamma ray impinged.

1,199,254. Thermocouples. UNITED KING- DOM ATOMIC ENERGY AUTHORITY. 25 Aug., 1967 [12 Sept., 1966], No. 40729/66. Heading H1K [Also in Division B3] The connections between adjacent elements of a thermoelectric module consisting of an array of bismuth telluride based semi-conductor bodies are made by an alloying technique in which gold or silver members are applied to the ends of a pair of such bodies under pressure at a temperature below the melting point of either the metal or the semi-conductor. The pairs of a complete module may be inter-oonnected sequentially or simultaneously, preferably by use of a heated presser foot, Fig. 2 (not shown). Preferred materials for the semi-conductor are Bi 2 Te 3 , Bi 2 Te 3 with Bi 2 Se 3 , or Bi 2 Te 3 with Sb 2 Te 3 . In forming a module of which the elements are encased in insulant, the insulant may be undercut around the edges of the semi-conductor body ends to be contacted so that molten insulant does not contaminate the alloy bond.

A vegetable or fruit sugar content measuring instrument comprises: a measuring electrode unit (10), comprising two measuring electrodes (11) capable of being inserted into a vegetable or fruit to be tested, wherein one end of one of the two measuring electrodes (11) is connected to one end of the other one of the two measuring electrodes (11); a resistor measuring circuit (20), connected to the measuring electrode unit (10), and configured to measure a resistor Rx between the two measuring electrodes (11); and a processor (30), connected to the resistor measuring circuit (20), and configured to determine, according to the resistor Rx between the two measuring electrodes (11), sugar content of the vegetable or fruit to be tested, and generate information indicative of the sugar content. L'invention concerne un instrument de mesure de teneur en sucre de légume ou fruit, qui comprend : une unité d'électrode de mesure (10), comprenant deux électrodes de mesure (11) pouvant être insérées dans un légume ou fruit à tester, une première extrémité de l'une des deux électrodes de mesure (11) étant reliée à une première extrémité de l'autre des deux électrodes de mesure (11) ; un circuit de mesure de résistance (20), relié à l'unité d'électrode de mesure (10) et configuré pour mesurer une résistance Rx entre les deux électrodes de mesure (11) ; et un processeur (30), relié au circuit de mesure de résistance (20) et configuré pour déterminer, en fonction de la résistance Rx entre les deux électrodes de mesure (11), la teneur en sucre du légume ou fruit à tester, et générer des informations indiquant la teneur en sucre. 一种果蔬含糖量检测器，包括：测量电极单元（10），具有能够插入待测果蔬的两测量电极（11），所述两测量电极（11）中一个的一端与另一个的一端相连；电阻检测电路（20），与所述测量电极单元（10）连接，用于检测两测量电极（11）之间的电阻Rx；以及处理器（30），与所述电阻检测电路（20）连接，用于根据所述两测量电极（11）之间的电阻Rx，确定所述待测果蔬的含糖量，并生成含糖量提示信息。

1,007,031. Semi-conductor devices. HONEYWELL Inc. March 30, 1962 [April 3, 1961], No. 12394/62. Drawings to Specification. Heading H1K. An element for a semi-conductor strain gauge comprises a crystal of high resistivity semi-conductor having a surface layer thereon highly doped with an N or P-type impurity substance, the surface layer thus having a comparatively low resistivity and having ohmic electrodes attached thereto at points remote from one another. Silicon, germanium, and other semi-conductors such as the intermetallic compounds may be used. Suitable doping agents include phosphorus, arsenic, antimony, aluminium, gallium, indium or boron. The surface layer may be provided by vapour diffusion techniques or, less desirably, by the direct alloying of electroplated or vacuum deposited films. The production of the particular embodiment starts with a silicon filament having a resistivity greater than 10 ohm. cm. and which is cut so as to have the (111) axis along the filament and so as to have a substantially square cross-section. After polishing the surface with a chemical etch, such as 1: 1 :1 H 2 O/HF/HNO 3 containing 1% by weight of silver nitrate, boron is diffused into the surface using known inert carrier gas techniques. To complete the element electrical contacts are made to the surface layer using an electroless nickel bath.