基本信息
摘要：PROBLEM TO BE SOLVED: To provide a light or radiation detecting device which reduces discharging due to a bias voltage applied to a light or radiation sensitive film. SOLUTION: A semiconductor thick film 1 in an external region A is formed of a polycrystalline semiconductor thick film 1A and a semiconductor thick film 1 in an internal area B is formed of an amorphous semiconductor thick film 1B, so the discharging caused by the bias voltage can be suppressed, so that such malfunction that a detection signal is detected even when no radiation is made incident hardly occurs. Further, the discharging is caused at the peripheral edge part of a voltage application electrode 3, so a device regarding this invention can easily be formed only by forming the polycrystalline semiconductor thick film 1A in the external region A.
摘要附图：
