基本信息

• 发明名称： 【发明专利】 Improvements in or relating to semi-conductor devices
• 申请日： 1970-08-16
• 申请号/专利号： GB1249160
• 专利权人： 无
• 申请人： TELEFUNKEN AG
• 分类号： H01L21/22
• 发明人/设计人： 无
• 公开日/公告日： 1970.08.16
• 优先权号： H01L21/22
• 代理机构：
• 代理人：
• PCT申请号： 无
• PCT申请日期： 无
• PCT进入国家阶段日： 无
• 生物宝藏信息： 无
• 审查员： 无

摘要：952,985. Semi-conductor devices. TELEFUNKEN A.G. April 8, 1960 [April 8, 1959], No. 12491/60. Heading H1K. In a transistor, the base zone includes particles (e.g. copper atoms) in a concentration such that the rate of recombination of charge carriers is a maximum adjacent either the emitter or the collector zone and reduces to a minimum adjacent the other of said zones. The Figure shows a device comprising base zone 1, emitter zone 2 and collector zone 3. A recombination layer 4 is provided adjacent the emitter which has the effect of reducing the grounded emitter current amplification factor # to improve the operating cut-off frequency. Alternatively the recombination layer could be adjacent the collector to prevent overloading and prevent storage effects. The recombination layer may be provided by diffusion of copper or nickel atoms.

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