基本信息
摘要：818,065. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Nov. 24, 1955 [Nov. 26, 1954], No. 33722/55. Class 37. A Hall effect device comprises a semi-conductor member with asymmetrical Hall electrodes such that a voltage appears between these electrodes when primary current is flowing but no magnetic field is applied, and means for applying a magnetic field of such magnitude that the Hall potential is reduced to zero or doubled, depending upon the direction of the field. The device may be utilized in switching, control or measuring circuits. Fig. 2 shows a semi-conductor body 1 having primary electrodes 2 and 3, and asymmetrical Hall electrodes 4 and 5 the output from which is applied to a measuring instrument 6. Fig. 3 shows an arrangement comprising three Hall electrodes the initial voltage between electrodes 14 and 15, and 16 and 14 being arranged to be zero and doubled respectively or vice versa according to whether the magnetic field is applied in one or the opposite direction. The magnetic field can thus be used to switch the output to either of electrodes 15 and 16. Other arrangements are described involving more than three Hall electrodes at least two of which are positioned asymmetrically, for switching or control purposes. The relative position of one or more of the electrodes may be made adjustable. The semi-conductor material may consist of Am Bv compounds such as In Sb or In As. Specifications 719,873, 763,348, 797,505 and 802,687 are referred to,
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