基本信息
摘要：1506322 Semi-conductor diode oscillators and mixers THOMSON-CSF 19 Jan 1976 [22 Jan 1975] 02037/76 Heading H3T [Also in Division H1] A circuit for radiating or receiving microwave radiation has a semi-conductor negative resistance or non-linear diode such as a Gunn or varactor diode 14, Fig. 1a located above an electrically conductive substrate 11, 12 and surrounded by a dielectric resonator 16 positioned on the substrate. An insulator 13 between conductive plates 11, 12 provides a #/4 trap and a wire 15 in a cavity 17 provides a half dipole coupling between the diode 14 and a GaAs dielectric resonator 16. The diode can be operated as an oscillator such that the circuit transmits microwave radiation or as a non-linear mixer element of a receiver circuit providing an IF from mixing of the received radiation with a local microwave radiation. In a further embodiment (Fig. 2, not shown) the dielectric resonator (26) is provided by a droplet of low melting point glass in which the coupling wire (25) and microwave diode (24) are enclosed. In a still further embodiment, Fig. 3a, made as an integrated circuit a silicon resonator 31 has two sections of a dipole 37, 38 metal vapour deposited on a silicon oxide insulator layer 39. Diffused zones 32, 33 form the microwave diode. Cavities 35 and 36 locate the two sections 37, 38 of the dipole and a cavity 34 gives the diode a mesa structure. The circuit is mounted on two concentric metal discs 310, 311 which are insulated by an insulator 312 to form a #/4 trap. In a modification of this (Fig. 4, not shown) only one dipole section (41) is provided.
摘要附图：
