基本信息
摘要：PROBLEM TO BE SOLVED: To produce high purity cobalt salt or manganese one at high yield and to produce an agent for forming thin film for thermistors capable of forming thin film which is homogeneous, dense and free from the occurrence of cracks. SOLUTION: A cobalt carboxylate having 4-9 atoms of carbon is obtained by reacting cobalt(II) formate dihydrate and/or cobalt(II) acetate tetrahydrate with a 4-9C carboxylic acid in a mixed state. A manganese carboxylate having 4-9 atoms of carbon is obtained by reacting manganese(II) formate dihydrate and/or manganese(II) acetate tetrahydrate with a 4-9C carboxylic acid in a mixed state. The 4-9C carboxylic acid is mixed with cobalt(II) formate dihydrate, cobalt(II) acetate tetrahydrate, manganese(II) formate dihydrate or manganese(II) acetate tetrahydrate in >=2 times mol quantity of them.
摘要附图：
