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摘要:The number of micropores per area in a thin film has a critical influence on its quality. Especially in semiconductor technology, the quality of thin layers on semiconductive substrates must therefore be tested frequently. In known methods for the examination of the micropores, the result is available at the earliest after several hours, in some methods not for days. Furthermore, the results depend strongly on the parameters of the examination methods. A method is described in which, in the region of micropores in the layer or on the substrate surface, changes (coloration) are brought about by means of anodic oxidation. The number of the changes (= the number of the micropores) is determined with the naked eye or with optical aids. The method also allows the determination of the size of the micropores.

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