基本信息

• 发明名称： 【发明专利】 Gas sensor with nanowires of zinc oxide or indium/zinc mixed oxides and method of detecting NOx gas
• 申请日： 1970-08-21
• 申请号/专利号： US12624205
• 专利权人： CHEN I-CHERNG;CHUEH MIAO-JU;HUANG YIH-SHIAW;SHIH TUNG-SHENG;SU PI-GUEY
• 申请人： IND TECH RES INST
• 分类号： G01N27/26
• 发明人/设计人： CHEN I-CHERNG;CHUEH MIAO-JU;HUANG YIH-SHIAW;SHIH TUNG-SHENG;SU PI-GUEY
• 公开日/公告日： 1970.08.21
• 优先权号： G01N27/26
• 代理机构：
• 代理人：
• PCT申请号： 无
• PCT申请日期： 无
• PCT进入国家阶段日： 无
• 生物宝藏信息： 无
• 审查员： 无

摘要：A gas sensor is disclosed, which includes two separate metal electrodes on a surface of a substrate and a semiconductor thin film deposited on the surface of the substrate and connecting the two metal electrodes. The semiconductor thin film contains zinc oxide or a mixed oxide of zinc and indium, and the zinc oxide or the mixed oxide of zinc and indium are in the form of nanowires which constitute a gas-sensing surface of the semiconductor thin film. The nanowires have a diameter of 50-900 nm. The present invention also discloses a method for detecting the presence of a NOx gas.

摘要附图：