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摘要:871,867. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Nov. 11, 1957 [Nov. 13, 1956], No. 35080/57. Class 37. A Hall plate, made of a material in which the carrier mobility is more than 6000 cm.<2>/volt sec., e.g. an AIII BV compound is disposed between the poles of an electromagnet in an air gap the thickness of which is less than (2 x 107- tines the carrier mobility)cm. The device is used as a modulator or frequency converter using a slowly varying direct current or lowfrequency alternating current through the winding of the electromagnet to modulate a higher-frequency current between the current electrodes of the Hall plate. The employment of the lower-frequency current in the magnet winding reduces unwanted inductive voltages in the output circuit. The core of the electromagnet is preferably made of a ferrite of high permeability and negligible hysteresis loss.

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