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摘要:A magnetoresistive head comprising a multi-layer thin film device on a substrate 40 has a material which is inert with respect to the soft film magnetic biasing layer 44 formed at the surface of the substrate prior to soft film deposition. Such materials may be a layer of metal such as Cr or Ta, which have high resistivity due to partial oxidation when deposited on the substrate. The substrate 40 has a layer of alumina (Al2O3) or silica (SiO2) on which the surface layer 42 is formed. The magnetoresistive layer 48 is typically formed for a NiFe alloy whilst the soft magnetic layer 44 comprises an alloy of NiFeRh, NiFeNb or NiFeCr.

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