基本信息
摘要：Semi-conductor devices are described which consists of a disc of N-type germanium containing three grain boundaries radiating symmetrically from the centre of the disc (and thus including 120 degrees angles). Germanium tricrystals for use in such devices can be prepared by crystalline growths from three single barshaped seeds of square cross-section. A 30 degrees relative misorientation is introduced between each pair of seeds by relative rotation of the seeds about the growth direction. The tricrystal is then grown by either a horizontal zone melting method or by the Czochralski method. A tricrystal thus prepared may be used as a seed for future growths. U.S.A. Specification 2,740,901 is referred to.
摘要附图：
