基本信息
摘要：686,948. Semi-conductor amplifiers. STANDARD TELEPHONES & CABLES, Ltd. March 2, 1951, No. 5113/51. Drawings to Specification. Class 40 (iv). A crystal triode comprises a body of semiconductor material containing a donor impurity, a first thin layer containing an acceptor material on one of its surfaces, and a second thin layer containing donor material on the first layer, and a base electrode, and two rectifying electrodes respectively contacting the first and second layers. Alternatively, the specified donor and acceptor characteristics may be interchanged throughout. The Specification refers to an electro-forming process for a crystal triode and the use of donor or acceptor material on the collector electrode as described in Specification 681,809, which improves the current gain characteristics of the device. Improvement in current-gain may also be obtained by adding donor or acceptor material to the surface layer of the semi-conductor of N- or P-type respectively, and this may be derived from a collector electrode containing such material by carrying out the above electro-forming process, or by overloading such a collector electrode during normal use. After surface treatment, collector electrodes without such added material may be used, and may consist of pure tungsten, or an electrode plated as described in Specification 686,915. Phosphorus, antimony and arsenic are given as examples of donor material and may be deposited on a tungsten wire forming the electrode. The emitter electrode may also consist of phosphor-bronze material.
摘要附图：
