The present invention relates to a method to inject an electrodeless charge to analyze an electronic material, and an electronic material analysis method using the same. According to the present invention, one metal electrode is omitted, an external electron or light is irradiated on a surface of a specimen to inject an electric charge and apply voltage inside the specimen, and phase transition induced with a current and the applied voltage generated by irradiation of the electron or light; thereby measuring the phase transition to analyze an electronic material, and being able to omit the metal electrode and realize a non-destructive spectroscopic and scattering experiment. While, a metal electrode formation process including a patterning process is necessarily required to analyze an I-V characteristic of a phase transition material in an existing method, the I-V characteristic of the material is able to promptly be confirmed in a thin film form; thereby being able to remarkably reduce process expenses and related efforts to form a metal electrode. Moreover, a current due to an electron or a hole is able to be controlled; thereby providing an opportunity capable of researching a current and a related effect in accordance with an electric charge carrier type, and moreover, excluding unnecessary additional effect (interface effect) caused from imperfectness of a metal/material interface in an I-V characteristic analysis using the metal electrode. 본 발명은 전자 소재 분석을 위한 무전극 전하 주입방법 및 이를 이용한 전자 소재 분석방법에 관한 것으로, 한쪽 금속전극을 생략하고 외부 전자 또는 빛을 시료 표면에 조사하여 전하를 주입시키고, 시료 내부에 전압을 인가하고, 전자 또는 빛의 조사에 의해 발생된 전류 및 인가 전압을 이용해 상전이를 유도하여 상전이를 측정하여 전자 소재를 분석함으로써 금속전극 생략 및 비파괴 분광 및 산란 실험을 가능하게 하고, 기존에 상전이 소재의 I-V 특성을 분석하기 위해서는 패터닝 공정을 포함하는 금속전극 형성과정이 반드시 필요하였으나 본 발명의 방법을 이용하면 소재가 박막형태에서 바로 I-V특성을 확인해 볼 수 있어서 금속전극 형성을 위한 공정비용과 관련 노력을 획기적으로 줄일 수 있으며, 전자 또는 전공에 의한 전류를 제어할 수 있어서 전하수송자의 종류에 따른 전류 및 관련 현상을 탐구할 수 있는 기회를 제공할 뿐만 아니라 금속전극을 이용한 I-V특성 분석에서 금속/소재 계면의 불완전성에 기인한 불필요한 부가 효과(계면효과)를 배제할 수 있는 각별한 장점이 있는 유용한 발명이다.

FIELD: physics. ^ SUBSTANCE: method of measuring permeability of a gas sample through a thin film or a wall comprises several steps. A step for placing said thin film or wall as a membrane between a first chamber and a second chamber in a sealed way. Said membrane separates and seals said first and second chambers. A step for causing said gas sample to flow into said first chamber and causing a carrier gas to flow in and out of said second chamber. An amount of said gas sample permeates into said second chamber through said membrane and is conveyed away by said gaseous carrier. The rate at which said gas sample permeated into said second chamber and was present in the flow of said carrier exiting from said second chamber is then determined. Further, said steps for causing said gas sample and said carrier gas to flow are carried out at a total pressure of said gas sample and said carrier gas in said first and second chambers at a predetermined value which is considerably higher than ambient pressure. The total pressure difference between said first and second chambers remains virtually equal to zero. Said total pressure predetermined value of the gas is set between 2 and 15 bar, preferably between 3 and 7 bar. The disclosed method also comprises a step for reducing said total pressure in said first and second chambers to a value less than said predetermined value. ^ EFFECT: high accuracy of measurements owing to high output of scattered laser light. ^ 14 cl, 8 dwg Изобретение относится к устройству и способу определения проницаемости газа через стенки тары, в основном тары для промышленной продукции, например тары из полимерной пленки для пищевых, химических, фармацевтических, электронных продуктов и т.п. Способ измерения проницаемости образца газа через тонкую пленку или стенку включает несколько стадий: стадию, на которой указанную тонкую пленку или стенку герметичным образом размещают как мембрану между первой и второй камерами, причем указанной мембраной разделяют и герметизируют указанные первую и вторую камеры; стадию, на которой обеспечивают протекание указанного образца газа в указанную первую камеру и обеспечивают протекание указанного газообразного носителя в указанную вторую камеру и из нее. Причем определенное количество указанного образца газа проникает в указанную вторую камеру через указанную мембрану и его уносит указанный газообразный носитель. Затем определяют скорость, с которой указанный образец газа проник в указанную вторую камеру и присутствовал в потоке указанного газообразного носителя, который выпускают из указанной второй камеры. Далее указанные стадии, на которых обеспечивают протекание указанного образца газа и указанного газообразного носителя, осуществляют под полным давлением указанного образца газа и газообразного носителя в указанных первой и второй камерах при заданном значении, значительно большем давления окружающей среды. Причем разность полных давлений между указанными первой и второй камерами оставляют практически равной нулю. При этом указанное заданное значение полного давления газа устанавливают в предел�

The invention relates to thin film-shaped or wafer-shaped pharmaceutical preparations for oral administration of active substances. The preparations contain at least one matrix-forming polymer which has at least one active substance and at least one carbon dioxide-forming substance dissolved or dispersed therein.

FIELD: thin films technology and multi-layer nano-structures. ^ SUBSTANCE: metallic film - semiconductor or insulating substrate structure is exposed to microwave radiation using a wave guide system. In front of the structure there is a dielectric plate with thickness L, and dielectric coefficient epsid, for which, in the chosen frequency range on one of the frequencies omega1, the condition holds, and on another frequency omega2, the condition holds, where a is the typical size of the cross-section of the wave guide system, omega=2pif is the angular frequency of the radiation, and epsi0 and mu0 are the dielectric and magnetic permittivity in a vacuum, respectively. Relative dielectric permittivity of the chosen dielectric plate should be more than 2. Electro-conductivity or thickness of the metallic film is determined from the frequency response of the reflection coefficient of the structure. ^ EFFECT: broader range of the measured thickness and class of the analysed materials and increased sensitivity. ^ 2 cl, 6 dwg

An object is to measure absorbance of aqueous cosmetic materials that have not heretofore been studied for absorbance measurement, and particularly to form a uniform layer of thin film in order to ensure accurate measurement without causing these aqueous cosmetic materials, which are O/W emulsions, to undergo phase separation during measurement. As a means for achieving the foregoing, an absorbance measurement method is provided, wherein an absorbent aqueous composition is applied on the surface of a substrate, which surface has been plasma treated, arc-discharge treated, or corona-discharge treated, to achieve a contact angle with pure water of 0 to 70.0 degrees, and the applied absorbent aqueous composition is measured for absorbance.

The present invention relates to a method and an apparatus for a resurfaceable contact pad that uses an epoxy to encapsulate contact pads so that the epoxy and encapsulated contact pads are coplanar on a silicon redistribution interposer. These redistribution interposers electrically connect a wafer semi-conductor to a probe card where it is necessary to convert the course pad arrangement of one with a fine pad arrangement of the other through the use of an interposer board. The present invention relates to an apparatus and a method creates resurfaceable contact pads which may be resurfaced one or multiple times with an abrasive sanding operation to recreate a coplanar surface should any contact pad surfaces become damaged, allowing for a more cost-effective repair.

A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically active material, and a magnetic pattern is formed in the magnetically active material by treating portions of the material with energy from a laser, e-beam, or focused ion beam. The beam may be divided into a packet of beamlets by passing the beam through a divider, which may be a diffraction grating for laser energy, a thin film single crystal for electrons, or a perforated plate for ions, or the beam may be generated by an array of emitters. The beamlets are then focused to a desired dimension and distribution by optics or electric fields. The resulting beam packet may be shaped further by passing through an aperture of any desired shape. The resulting beam may be applied sequentially to exposure zones to treat an entire substrate or plurality of substrates.

Metal complexes of formula (M(L1L2L3))n-XmA (I) are new. M = a di- or trivalent rare earth or transition metal cation; L1-L3 = ligands which contain at least two N-contg. heterocyclic rings and are coordinated to M through N atoms; X = a reactive or activatable functional gp. covalently attached to at least one of L1-L3; n = 1-10; m = 1-6; A = counterion; provided that the complex contains at least one hydrophilic gp. contg. units Y. Y = 2-3C alkyleneoxy, 2-3C alkylenethio, 2-3C alkyleneimino and/or polyhydroxy (sic). Also claimed is a conjugate comprising at least one complex as above coupled to a biological substance. Pref. M = Ru, Re, Os, Cr or Ir, esp. Ru; L1-L3 = bipyridine or phenanthroline ligands; X = a carboxylic acid halide, anhydride, activated ester, maleimide, amine, carboxylic acid, thiol, halide, hydroxyl or photoactivatable gp.; the hydrophilic gp. is NR(CH2OH)3 or comprises 1-30 CH2CH2O, CH2CH2S or CH2CH2NH units; R = H or 1-5C alkyl. The conjugate is to biotin, an antibody or antibody fragment, a nucleic acid, a polypeptide antigen, an immunoreactive peptide or a hapten.